FET Datasheet(PDF) - FS50UMJ-3 - Renesas Technology Corp

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FET Datasheet, PDF

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Searched Keyword : 'FET' - Total: 10192 (304/510) Pages

Manufacturer	Part #	Datasheet	Description
Renesas Technology Corp	FS50UMJ-3	172Kb/7P	High-Speed Switching Use Nch Power MOS FET
	2SK3289	44Kb/7P	Silicon N Channel MOS FET High Speed Switching
	FS70SM-06	174Kb/7P	High-Speed Switching Use Nch Power MOS FET
	2SJ575	167Kb/10P	Silicon P Channel MOS FET High Speed Switching
	FS5AS-2	197Kb/7P	High-Speed Switching Use Nch Power MOS FET
	FS10VS-9A	206Kb/7P	High-Speed Switching Use Nch Power MOS FET
	FS30ASJ-06F	103Kb/7P	High-Speed Switching Use Nch Power MOS FET
	FX70SMJ-03	172Kb/7P	High-Speed Switching Use Pch Power MOS FET
	HAF1001	88Kb/8P	Silicon P Channel MOS FET Series Power Switching
Clare, Inc.	MX856	189Kb/7P	Single Driver for GaAs FET Switches and Attenuators
Texas Instruments	SN74CBTLV3251	380Kb/12P	LOW-VOLTAGE 1-OF-8 FET MULTIPLEXER/DEMULTIPLEXER
Samsung semiconductor	KSK161	134Kb/4P	N-CHANNEL JUNCTION FET (FM TUNER VHF AMPLIFIER)
Samsung semiconductor	KSK211	133Kb/4P	N-CHANNEL JUNCTION FET (FM TUNER VHF AMPLIFIER)
Burr-Brown (TI)	OPA137	269Kb/8P	LOW COST FET-INPUT OPERATIONAL AMPLIFIERS MicroAmplifier ??Series
Texas Instruments	SN74CBTD3861	80Kb/6P	10-BIT FET BUS SWITCH WITH LEVEL SHIFTING
ON Semiconductor	NIF5002N	58Kb/6P	Self-Protected FET with Temperature and Current Limit January, 2004 ??Rev. 5
NEC	2SK3307	66Kb/8P	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Hitachi Semiconductor	2SK2795	40Kb/6P	Silicon N Channel MOS FET UHF Power Amplifier
Hitachi Semiconductor	HAF2015RJ	67Kb/10P	SILICON N CHANNEL MOS FET SERIES POWER SWITCHING
Freescale Semiconductor...	MRF9582NT1	288Kb/8P	Silicon Lateral FET, N -Channel Enhancement-Mode MOSFET

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What is FET

FET stands for Field Effect Transistor and is one of the electronic components.

FET is a device that controls the output current according to the magnitude and direction of the input voltage.

FETs use less power and are suitable for high-frequency and high-performance applications.

FETs work by applying an electrical signal to the channel to control its conductivity.

It behaves in a different way than conventional bipolar transistors.

A FET induces a current in the channel by applying a voltage to the semiconductor element forming the channel.

In this way, the FET uses a small amount of power to control the output current.

There are various types of FETs, such as MOSFET (Metal Oxide Semiconductor FET) and JFET (Junction FET).

MOSFETs are the most common type and operate using electrically isolated channels.

A JFET is a structure that uses a pn junction to form a channel, and operates without applying a voltage.

FETs are extensively used in electronic components. The main applications are high-frequency and high-performance applications, integrated circuits, amplifiers, switching circuits, filters, etc.

FETs play a huge role in improving the performance of electronic devices by offering lower power consumption and higher speeds than traditional bipolar transistors.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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