FETS Datasheet(PDF) - BF904 - NXP Semiconductors

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What is FETS

FET stands for Field-Effect Transistor, and it is a type of semiconductor device that is used as a switch or an amplifier in electronic circuits. FETs are three-terminal devices, with a source, a drain, and a gate.

The operation of an FET is based on the control of the flow of charge carriers (electrons or holes) by an electric field, rather than by the injection of charge carriers, as is the case with bipolar transistors.

There are two main types of FETs: the junction FET (JFET) and the metal-oxide-semiconductor FET (MOSFET).

In a JFET, a reverse-biased PN junction is used to create a depletion region that forms a channel between the source and drain terminals. The width of the channel is controlled by the voltage applied to the gate terminal, which modulates the width of the depletion region and hence the conductivity of the channel.

JFETs are typically used in low-noise amplifier circuits, as they have a very low input capacitance and a high input impedance.

In a MOSFET, an oxide layer is used to separate the gate from the channel region.

The oxide layer acts as an insulator, and the gate terminal is used to create an electric field that controls the conductivity of the channel.

MOSFETs are widely used in digital and analog circuits, as they have a high input impedance, a low output impedance, and a fast switching speed.

FETs have a number of advantages over other types of transistors, including a high input impedance, a low power consumption, and a high switching speed.

They are used in a wide range of applications, including in amplifiers, oscillators, switches, and voltage regulators, as well as in digital circuits such as logic gates and memory cells.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BF904	111Kb/16P	N-channel dual gate MOS-FETs 1999 May 17
NXP Semiconductors	BF904A	114Kb/16P	N-channel dual gate MOS-FETs 1999 May 14
Quanzhou Jinmei Electro...	BF1107_2015	66Kb/8P	N-channel single gate MOS-FETs
Quanzhou Jinmei Electro...	BF1211_2015	119Kb/15P	N-channel dual-gate MOS-FETs
NXP Semiconductors	BF904	309Kb/14P	N-channel dual gate MOS-FETs Rev. 06-13 November 2007
Central Semiconductor C...	2N4220	58Kb/1P	Junction FETs Low Frequency/ Low Noise
NXP Semiconductors	BF909	320Kb/12P	N-channel dual gate MOS-FETs Rev. 02-19 November 2007
Transcom, Inc.	TC3989	77Kb/3P	5.8 GHz 35.5 dBm Prematched FETs
Zibo Seno Electronic En...	GM2308S	723Kb/3P	N-Channel Enhancement-Mode MOS FETs
Quanzhou Jinmei Electro...	BF909_2015	326Kb/12P	N-channel dual gate MOS-FETs
Quanzhou Jinmei Electro...	BF904	309Kb/14P	N-channel dual gate MOS-FETs
NXP Semiconductors	BF1109	371Kb/15P	N-channel dual-gate MOS-FETs 1997 Dec 08
TECH PUBLIC Electronics...	TPM2301GS3	1Mb/6P	P-Channel Enhancement-Mode MOS FETs
Supertex, Inc	DN3545	102Kb/4P	N-Channel Depletion-Mode Vertical DMOS FETs
	TN5325	446Kb/2P	N-Channel Enhancement-Mode Vertical DMOS FETs
	TN2501	476Kb/4P	N-Channel Enhancement-Mode Vertical DMOS FETs
	VN0606	434Kb/2P	N-Channel Enhancement-Mode Vertical DMOS FETs
NXP Semiconductors	BF1201	113Kb/16P	N-channel dual-gate PoLo MOS-FETs 2000 Mar 29
	BF1202	116Kb/16P	N-channel dual-gate PoLo MOS-FETs 2000 Mar 29
	BF1102	133Kb/16P	Dual N-channel dual gate MOS-FETs 2000 Apr 11

FETS Datasheet, PDF

What is FETS

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