FETS Datasheet(PDF) - PTFB211501EF - Infineon Technologies AG

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What is FETS

FET stands for Field-Effect Transistor, and it is a type of semiconductor device that is used as a switch or an amplifier in electronic circuits. FETs are three-terminal devices, with a source, a drain, and a gate.

The operation of an FET is based on the control of the flow of charge carriers (electrons or holes) by an electric field, rather than by the injection of charge carriers, as is the case with bipolar transistors.

There are two main types of FETs: the junction FET (JFET) and the metal-oxide-semiconductor FET (MOSFET).

In a JFET, a reverse-biased PN junction is used to create a depletion region that forms a channel between the source and drain terminals. The width of the channel is controlled by the voltage applied to the gate terminal, which modulates the width of the depletion region and hence the conductivity of the channel.

JFETs are typically used in low-noise amplifier circuits, as they have a very low input capacitance and a high input impedance.

In a MOSFET, an oxide layer is used to separate the gate from the channel region.

The oxide layer acts as an insulator, and the gate terminal is used to create an electric field that controls the conductivity of the channel.

MOSFETs are widely used in digital and analog circuits, as they have a high input impedance, a low output impedance, and a fast switching speed.

FETs have a number of advantages over other types of transistors, including a high input impedance, a low power consumption, and a high switching speed.

They are used in a wide range of applications, including in amplifiers, oscillators, switches, and voltage regulators, as well as in digital circuits such as logic gates and memory cells.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PTFB211501EF	351Kb/13P	Thermally-Enhanced High Power RF LDMOS FETs Rev. 03.1, 2016-06-14
	PTVA123501EFC	1Mb/14P	Thermally-Enhanced High Power RF LDMOS FETs Rev. 05, 2015-07-07
	PTFA072401EL	563Kb/9P	Thermally-Enhanced High Power RF LDMOS FETs Rev. 05, 2015-02-24
	PTFA092213EL	1Mb/10P	Thermally-Enhanced High Power RF LDMOS FETs Rev. 05, 2015-03-04
Supertex, Inc	VN1306	28Kb/4P	N-Channel Enhancement-Mode Vertical DMOS FETs
	DN2640	43Kb/2P	N-Channel Depletion-Mode Vertical DMOS FETs
	VN0540	30Kb/4P	N-Channel Enhancement-Mode Vertical DMOS FETs
	TP2635	562Kb/5P	P- Channel Enhancement-Mode Vertical DMOS FETs
	VN0550	534Kb/5P	N-Channel Enhancement-Mode Vertical DMOS FETs
	DN3145	393Kb/3P	N-Channel Depletion-Mode Vertical DMOS FETs
	VN10KN9	242Kb/4P	N-Channel Enhancement-Mode Vertical DMOS FETs
Transcom, Inc.	TC1201	251Kb/6P	Low Noise and Medium Power GaAs FETs
Transcom, Inc.	TC1201V	122Kb/2P	Low Noise and Medium Power GaAs FETs
Supertex, Inc	2N7008	592Kb/3P	N-Channel Enhancement-Mode Vertical DMOS FETs
Infineon Technologies A...	PTFB211503EFL	832Kb/14P	Thermally-Enhanced High Power RF LDMOS FETs Rev. 04.1, 2016-06-14
Supertex, Inc	VP0109	665Kb/5P	P-Channel Enhancement-Mode Vertical DMOS FETs
Maxim Integrated Produc...	MAX16046EVKIT	1Mb/25P	On-Board LDO Regulators and Tracking FETs Rev 1; 3/09
Supertex, Inc	VN2222LL	433Kb/2P	N-Channel Enhancement-Mode Vertical DMOS FETs
Supertex, Inc	VN2460	457Kb/4P	N-Channel Enhancement-Mode Vertical DMOS FETs
Calogic, LLC	SD210	29Kb/2P	High-Speed Analog N-Channel DMOS FETs

FETS Datasheet, PDF

What is FETS

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