FETS Datasheet(PDF) - FTK0910S - First Silicon Co., Ltd

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What is FETs

FET stands for Field-Effect Transistor, and it is a type of semiconductor device that is used as a switch or an amplifier in electronic circuits. FETs are three-terminal devices, with a source, a drain, and a gate.

The operation of an FET is based on the control of the flow of charge carriers (electrons or holes) by an electric field, rather than by the injection of charge carriers, as is the case with bipolar transistors.

There are two main types of FETs: the junction FET (JFET) and the metal-oxide-semiconductor FET (MOSFET).

In a JFET, a reverse-biased PN junction is used to create a depletion region that forms a channel between the source and drain terminals. The width of the channel is controlled by the voltage applied to the gate terminal, which modulates the width of the depletion region and hence the conductivity of the channel.

JFETs are typically used in low-noise amplifier circuits, as they have a very low input capacitance and a high input impedance.

In a MOSFET, an oxide layer is used to separate the gate from the channel region.

The oxide layer acts as an insulator, and the gate terminal is used to create an electric field that controls the conductivity of the channel.

MOSFETs are widely used in digital and analog circuits, as they have a high input impedance, a low output impedance, and a fast switching speed.

FETs have a number of advantages over other types of transistors, including a high input impedance, a low power consumption, and a high switching speed.

They are used in a wide range of applications, including in amplifiers, oscillators, switches, and voltage regulators, as well as in digital circuits such as logic gates and memory cells.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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Manufacturer	Part #	Datasheet	Description
First Silicon Co., Ltd	FTK0910S	990Kb/5P	100V N-Channel MOS FETs
Shanghai Leiditech Elec...	LM3401	493Kb/3P	P-Channel Enhancement-ModeMOS FETs
Transcom, Inc.	TC1202	173Kb/4P	Super Low Noise GaAs FETs
Motorola, Inc	MRF166C	111Kb/6P	MOSFET BROADBAND RF POWER FETs
List of Unclassifed Man...	TC1202	111Kb/4P	Super Low Noise GaAs FETs
NXP Semiconductors	J108	45Kb/7P	N-channel silicon junction FETs 1996 Jul 30
First Silicon Co., Ltd	FTK001N60S	989Kb/5P	600V N-Channel MOS FETs
	FTK2309L	1Mb/5P	20V P-Channel MOS FETs
	FTK3912Z	974Kb/5P	30V N-Channel MOS FETs
Shanghai Leiditech Elec...	LM2305	502Kb/3P	P-Channel Enhancement-ModeMOS FETs
Shanghai Leiditech Elec...	LM3407	512Kb/3P	P-Channel Enhancement-ModeMOS FETs
Panasonic Semiconductor	2SK3546G	233Kb/4P	Silicon Jumction FETs Small Signal
New Jersey Semi-Conduct...	MTM3N75	131Kb/2P	TMOS POWER FETs 3 AMPERES
Shanghai Leiditech Elec...	LM2302	385Kb/3P	N-Channel Enhancement-ModeMOS FETs
Guilin Strong Micro-Ele...	GM2301	317Kb/3P	P-Channel Enhancement-Mode MOS FETs
Quanzhou Jinmei Electro...	BF1105_2015	125Kb/16P	N-channel dual-gate MOS-FETs
Quanzhou Jinmei Electro...	BF1109_2015	120Kb/16P	N-channel dual-gate MOS-FETs
NXP Semiconductors	BF904	303Kb/14P	N-channel dual gate MOS-FETs Rev. 06-13 November 2007
Shanghai Leiditech Elec...	LMS2301AL	1Mb/3P	P-Channel Enhancement-Mode MOS FETs
Tyco Electronics	MRF175LU	144Kb/8P	N-CHANNEL BROADBAND RF POWER FETs

FETS Datasheet, PDF

What is FETs

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