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FETS Datasheet, PDF

Searched Keyword : 'FETs' - Total: 633 (1/32) Pages
ManufacturerPart #DatasheetDescription
Company Logo Img
Leshan Radio Company
LBSS8402DW1T1G Datasheet pdf image
649Kb/9P
FETs and Diodes
Company Logo Img
Panasonic Semiconductor
2SK0665 Datasheet pdf image
79Kb/3P
Silicon MOS FETs
Company Logo Img
NXP Semiconductors
PMBF4391 Datasheet pdf image
40Kb/7P
N-channel FETs
April 1995
BSR56 Datasheet pdf image
37Kb/6P
N-channel FETs
April 1991
BF908 Datasheet pdf image
87Kb/8P
Dual-gate MOS-FETs
1996 Jul 30
BUK3F00-50WDXX Datasheet pdf image
264Kb/52P
Controller for TrenchPLUS FETs
Rev. 04-4 September 2008
Company Logo Img
Mimix Broadband
CFB0101 Datasheet pdf image
435Kb/2P
General Purpose GaAs FETs
Company Logo Img
List of Unclassifed Man...
CFA0103 Datasheet pdf image
469Kb/2P
LOW-NOISE GaAs FETS
Company Logo Img
NXP Semiconductors
BF908 Datasheet pdf image
258Kb/9P
Dual-gate MOS-FETs
Rev. 03-14 November 2007
PMBFJ108 Datasheet pdf image
36Kb/6P
N-channel junction FETs
April 1995
BF861A Datasheet pdf image
102Kb/12P
N-channel junction FETs
1997 Sep 04
Company Logo Img
Mimix Broadband
CFA0101 Datasheet pdf image
674Kb/2P
General Purpose GaAs FETs
Company Logo Img
Quanzhou Jinmei Electro...
BF861 Datasheet pdf image
91Kb/12P
N-channel junction FETs
BF861_2015 Datasheet pdf image
91Kb/12P
N-channel junction FETs
BF1100 Datasheet pdf image
115Kb/14P
Dual-gate MOS-FETs
BF1100_2015 Datasheet pdf image
115Kb/14P
Dual-gate MOS-FETs
Company Logo Img
Mimix Broadband
CFA0103 Datasheet pdf image
981Kb/2P
Low Noise GaAs FETs
CFB0103 Datasheet pdf image
654Kb/2P
Low Noise GaAs FETs
CFB0103 Datasheet pdf image
1Mb/3P
Low-Noise GaAs FETs
Company Logo Img
NXP Semiconductors
BF1100 Datasheet pdf image
311Kb/15P
Dual-gate MOS-FETs
Rev. 02-13 November 2007

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What is FETs


FET stands for Field-Effect Transistor, and it is a type of semiconductor device that is used as a switch or an amplifier in electronic circuits. FETs are three-terminal devices, with a source, a drain, and a gate.

The operation of an FET is based on the control of the flow of charge carriers (electrons or holes) by an electric field, rather than by the injection of charge carriers, as is the case with bipolar transistors.

There are two main types of FETs: the junction FET (JFET) and the metal-oxide-semiconductor FET (MOSFET).

In a JFET, a reverse-biased PN junction is used to create a depletion region that forms a channel between the source and drain terminals. The width of the channel is controlled by the voltage applied to the gate terminal, which modulates the width of the depletion region and hence the conductivity of the channel.

JFETs are typically used in low-noise amplifier circuits, as they have a very low input capacitance and a high input impedance.

In a MOSFET, an oxide layer is used to separate the gate from the channel region.

The oxide layer acts as an insulator, and the gate terminal is used to create an electric field that controls the conductivity of the channel.

MOSFETs are widely used in digital and analog circuits, as they have a high input impedance, a low output impedance, and a fast switching speed.

FETs have a number of advantages over other types of transistors, including a high input impedance, a low power consumption, and a high switching speed.

They are used in a wide range of applications, including in amplifiers, oscillators, switches, and voltage regulators, as well as in digital circuits such as logic gates and memory cells.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.


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