An Insulated-Gate Bipolar Transistor (IGBT) is a type of power semiconductor device used for controlling high-voltage, high-current applications, such as in power supplies, motor drives, and inverters. It combines the fast switching speed of a bipolar junction transistor (BJT) with the voltage-controlled gate of a metal-oxide-semiconductor field-effect transistor (MOSFET).
The IGBT works by using a MOSFET as the input stage and a bipolar junction transistor as the output stage.
The gate of the MOSFET is isolated from the rest of the device, which allows for high-voltage operation and improved reliability.
*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.
|
English ▼ 
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
