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3.8 Datasheet, PDF

Search Description : '3.8' - Total: 69 (1/4) Pages
Electronic ManufacturerPart NumberDatasheetElectronics Description

RF Monolithics, Inc
SM3838-8 8-Terminal Ceramic Surface-Mount Case 3.8 X 3.8 mm Nominal Footprint

TAI-SAW TECHNOLOGY CO.,...
TC0629A 1000.634MHz SMD 3.8 x 3.8 mm SAW Resonator

Hittite Microwave Corpo...
HMC305LP4_10 0.5 dB LSB GaAs MMIC 5-BIT SERIAL CONTROL DIGITAL ATTENUATOR, 0.7 - 3.8 GHz
HMC273MS10GE 1 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.7 - 3.8 GHz

Analog Devices
AD7895ARZ-2 5 V, 12-Bit, Serial 3.8 ms ADC in 8-Pin Package

STMicroelectronics
ST72324BXX 8-bit MCU, 3.8 to 5.5 V operating range with 8 to 32 Kbyte Flash/ROM, 10-bit ADC, 4 timers, SPI, SCI

Analog Devices
AD8180 750 MHz, 3.8 mA 10 ns Switching Multiplexers

Hittite Microwave Corpo...
HMC333_08 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 3.0 - 3.8 GHz

Fairchild Semiconductor
FDMS7670 N-Channel PowerTrench® MOSFET 30 V, 3.8

Agilent(Hewlett-Packard...
HDSP-2000 FOUR CHARACTER 3.8 mm (0.15 INCH) 5 x 7 ALPHANUMERIC DISPLAYS

Hittite Microwave Corpo...
HMC409LP4 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz

M/A-COM Technology Solu...
MAPS-010164 Digital Phase Shifter 6-Bit, 2.3 - 3.8 GHz

Hittite Microwave Corpo...
HMC273MS10G_08 1 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.7 - 3.8 GHz
HMC306MS10_06 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.7 - 3.8 GHz

Motorola, Inc
MTP2N60E TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

Fairchild Semiconductor
FDME1034CZT Complementary PowerTrench® MOSFET N-channel: 20 V, 3.8 A, 66 mΩ P-channel: -20 V, -2.6 A, 142

Hittite Microwave Corpo...
HMC472LP4_09 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 3.8 GHz
HMC593LP3_09 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz

Schurter Inc.
172593 Subminiature Fuse, 3.8 x 10 mm, Quick-Acting F, 250 VAC, 125 VDC

Hittite Microwave Corpo...
HMC603QS16 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, 0.7 - 3.8 GHz

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