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 Search History : DIODE

DIODE Datasheet

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Search Description : 'DIODE' - Total: 20648 (1/10) Pages
NOPart no Electronics DescriptionViewElectronic Manufacturer
1 LL46 Small-Signal Diode Schottky Diode
GOOD-ARK Electronics
2 DB473S6 Silicon Diffused Junction Type Diode ESD Protection Diode
Sanyo Semicon Device
3 BYP303 FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics)
Siemens Semiconductor Group
4 MMAD1106_05 Switching Diode Array Steering Diode TVS Array
Microsemi Corporation
5 KDV348E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
KEC(Korea Electronics)
6 SP0502BAHT TVS Diode Arrays - Surface Mount TVS Avalanche Diode Array
Littelfuse
7 CPD41 Switching Diode High Current Switching Diode Chip
Central Semiconductor Corp
8 NX7437 LASER DIODE 1 490 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
Renesas Technology Corp
9 MAD1107_05 Switching Diode Array Steering Diode TVS ArrayTM
Microsemi Corporation
10 BAT60B Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply
Siemens Semiconductor Group
11 E35A23VDS STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE)
KEC(Korea Electronics)
12 BYP301 FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics)
Siemens Semiconductor Group
13 MMAD1103_05 Switching Diode Array Steering Diode TVS ArrayTM
Microsemi Corporation
14 56NDD Diode - Diode Module
Naina Semiconductor ltd.
15 RJU60C3TDPP-EJ Single Diode Fast Recovery Diode
Renesas Technology Corp
16 CD4148WP Switching Diode Silicon epitaxial planar diode
Chendahang Electronics Co., Ltd
17 BAS70-06S Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping)
Siemens Semiconductor Group
18 NTMD4184PF Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode
ON Semiconductor
19 RD2004LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode
Sanyo Semicon Device
20 NX8350TS LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
California Eastern Labs

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