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 Search History : DIODE

DIODE Datasheet

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Search Description : 'DIODE' - Total: 20648 (1/10) Pages
NOPart Number Electronics DescriptionViewElectronic Manufacturer
1 NX5522 LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
Renesas Technology Corp
2 Z02W2.0V ZENER DIODE SILICON EPITAXIAL PLANAR DIODE
KEC(Korea Electronics)
3 BUP400D IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
Siemens Semiconductor Group
4 E30A27VS STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE)
KEC(Korea Electronics)
5 BUP602D IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
Siemens Semiconductor Group
6 NTLJD3182FZ Power MOSFET and Schottky Diode −20 V, −4.0 A, μCool™ Single P−Channel & Schottky Barrier Diode, ESD
ON Semiconductor
7 NX8369TS LASER DIODE 1 625 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
California Eastern Labs
8 CPD82X Schottky Diode High Current, Low VF Schottky Diode Chip
Central Semiconductor Corp
9 DS17 Rectifier Diode Avalanche Diode
IXYS Corporation
10 NX8349TS LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
California Eastern Labs
11 40NDD Diode - Diode Module
Naina Semiconductor ltd.
12 CPD82X_10 Schottky Diode High Current, Low VF Schottky Diode Chip
Central Semiconductor Corp
13 BBY58-02W Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
Siemens Semiconductor Group
14 ML720A1S-E22E laser diode cathode photodiode cathode case common laser diode anode and photodiode anode
Roithner LaserTechnik GmbH
15 BGX50A Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip)
Siemens Semiconductor Group
16 RJU60C6SDPK-M0 Single Diode Fast Recovery Diode
Renesas Technology Corp
17 E30A2CS STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE)
KEC(Korea Electronics)
18 NX6240GP LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
Renesas Technology Corp
19 EC2C03C Diffused Junction Type Silicon Diode Variable Capacitance Diode for UHF Band VCO
Sanyo Semicon Device
20 NX6342EP LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
Renesas Technology Corp

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