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HEAVY Datasheet, PDF

Searched Keyword : 'heavy' - Total: 2093 (1/105) Pages
ManufacturerPart #DatasheetDescription
Company Logo Img
HuaXinAn Electronics CO...
JQX-14FC2C Datasheet pdf image
745Kb/2P
Heavy load, suitable for heavy power reverse
JQX-14FCA Datasheet pdf image
745Kb/2P
Heavy load, suitable for heavy power reverse
JQX-14FCC Datasheet pdf image
745Kb/2P
Heavy load, suitable for heavy power reverse
JQX-14FC2A Datasheet pdf image
745Kb/2P
Heavy load, suitable for heavy power reverse.
Company Logo Img
TT Electronics.
P270 Datasheet pdf image
859Kb/6P
Heavy duty applications
Company Logo Img
Energizer
1251 Datasheet pdf image
577Kb/1P
Heavy Duty Flashlight
1251L Datasheet pdf image
228Kb/1P
Heavy Duty Flashlight
Company Logo Img
HuaXinAn Electronics CO...
4117C Datasheet pdf image
1Mb/1P
Superminiature, heavy power
4117W Datasheet pdf image
1Mb/1P
Superminiature, heavy power
Company Logo Img
OEN India Limited
OEN53 Datasheet pdf image
529Kb/2P
HEAVY DUTY RELAY
Company Logo Img
List of Unclassifed Man...
BU-24APN Datasheet pdf image
49Kb/1P
Heavy Duty Clip
Company Logo Img
HuaXinAn Electronics CO...
4117U Datasheet pdf image
1Mb/1P
Superminiature, heavy power
Company Logo Img
Extech Instruments Corp...
407026 Datasheet pdf image
537Kb/8P
Heavy Duty Meter
Company Logo Img
OEN India Limited
OEN53PT Datasheet pdf image
542Kb/2P
HEAVY DUTY RELAY
Company Logo Img
Energizer
1151 Datasheet pdf image
585Kb/1P
Heavy Duty Flashlight
Company Logo Img
TT Electronics.
DS2531 Datasheet pdf image
291Kb/1P
Heavy Duty Sensor
Company Logo Img
List of Unclassifed Man...
12BC015-GR Datasheet pdf image
79Kb/1P
Heavy Duty Snap
Company Logo Img
Energizer
1235 Datasheet pdf image
146Kb/2P
SUPER HEAVY DUTY
1250 Datasheet pdf image
147Kb/2P
SUPER HEAVY DUTY
Company Logo Img
OEN India Limited
530-1A-06S0 Datasheet pdf image
98Kb/3P
HEAVY DUTY RELAY

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What is heavy


HEMT stands for “High Electron Mobility Transistor.” This is a semiconductor device for high-frequency power transmission used in electronics. These transistors are widely used in high-frequency applications, and their high speed and low noise characteristics make them particularly useful in broadband and wireless communications.

The HEMT consists of a gate electrode, a channel, and source/drain electrodes. This transistor was developed to solve various device noise and efficiency issues. Suitable for high-voltage, high-frequency, low-noise applications, especially used in communications technology, satellite communications, radar and various wireless communications fields.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.


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