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1 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply

Toshiba Semiconductor
TMM2018AP   TMM2018AP-25   TMM2018AP-35   TMM2018AP-45  
2 1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.

Elpida Memory
EDE1104AASE  
3 65,536 Bit static random access memory organized as 8,192 words by 8 bits using CMOS

LG Semicon Co.,Ltd.
GM76C88AL   GM76C88AL-12   GM76C88AL-15  
4 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology

Toshiba Semiconductor
TC5565APL  
5 a high-speed synchronous dynamic random access memory (SDRAM), organized as 1,048,576 words ¡¿ 4 banks ¡¿ 32 bits

Winbond
W9812G2GH   W9812G2GH-6   W9812G2GH-6C   W9812G2GH-6I   W9812G2GH-75  
6 EDO DRAM Board 512Mbyte ( 32M x 144-Bit ) organized as 4Banks of 8Mx144, 4K Ref., 3.3V, ECC

Hanbit Electronics Co.,Ltd
HCPMEM-512  
7 Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits

Winbond
W24LH8   W24LH8S-55LE   W24LH8Q-55LE   W24LH8S-55LI   W24LH8Q-55LI  
8 Organized as 4-blank x 2097152-word x 16-bit(8Mx16)

Avic Technology
TM54S816T  
9 The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each

Catalyst Semiconductor
CAT24FC02  
10 The CY7C1062AV33 is a high-performance CMOS Static RAM organized as 524,288 words by 32 bits.

Cypress Semiconductor
CY7C1062AV33  

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