Manufacturer | Part No. | Datasheet | Description |

Switchcraft, Inc.
|
RASM712 |
95Kb / 1P |
POWER JACK, SURFACE MOUNT 0.10 [2.5mm] PIN |
RASM712P |
101Kb / 1P |
POWER JACK, SURFACE MOUNT 0.10 [2.5mm] PIN |
RASH712 |
140Kb / 2P |
POWER JACK, HYBRID MOUNT 0.10 [2.5mm] PIN |
RASH712P |
144Kb / 2P |
POWER JACK, HYBRID MOUNT 0.10 [2.5mm] PIN |
RAPC712 |
79Kb / 1P |
POWER JACK, PC MOUNT 0.10 [2.5mm] PIN |

Molex Electronics Ltd.
|
0901361412 |
29Kb / 2P |
C-Grid III Header, Single Row, Vertical, Shrouded, 12 Circuits, Flash 0.10關m Gold (Au) Selective Plating |
0901311086 |
29Kb / 2P |
2.54mm Pitch C-Grid III Header, Dual Row, Vertical, 12 Circuits, 0.10關m Gold (Au) Selective Plating |
0901211092 |
28Kb / 2P |
2.54mm Pitch C-Grid III Header, Single Row, Right Angle, 12 Circuits, 0.10關m Gold (Au) Selective Plating |

Switchcraft, Inc.
|
761K |
225Kb / 1P |
0.10 2.5mm x 0.474LONG POWER PLUG W/LOCKRING, RoHS |

Analog Microelectronics
|
SOP-16 |
89Kb / 1P |
A : MIN 1.35 MAX 1.75 A1 : MIN 0.10 MAX 0.25 |

STMicroelectronics
|
STC08IE120HV |
268Kb / 11P |
Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm |
STP08IE120F4 |
278Kb / 11P |
Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm |
STC08IE150HV |
120Kb / 7P |
Emitter Switched Bipolar Transistor ESBT 1500 V - 8A - 0.10 ohm |

Solid States Devices, I...
|
SFF40N30M |
48Kb / 3P |
40 AMP / 300 Volts 0.10 OHM N-Channel Power MOSFET |
SFF40N30B |
202Kb / 2P |
40 AMPS 300 VOLTS 0.10 OHM N-Channel POWER MOSFET |

Analog Microelectronics
|
SC-70-5 |
80Kb / 1P |
A : MIN 0.80 MAX 1.10 A1 : MIN 0.00 MAX 0.10 |
SSOP-28 |
69Kb / 1P |
A : MIN 1.35 MAX 1.75 A1 : MIN 0.10 MAX 0.25 |

Solid States Devices, I...
|
SFF40N30N |
236Kb / 2P |
40 AMPS 300 VOLTS 0.10 OHM N-Channel POWER MOSFET |
SFF40N30-3 |
199Kb / 2P |
40 AMPS 300 VOLTS 0.10 OHM N-Channel POWER MOSFET |

STMicroelectronics
|
STC08IE120HP |
295Kb / 11P |
Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm |