Manufacturer | Part # | Datasheet | Description |
Tyco Electronics
|
MAALSS0033 |
176Kb/7P |
Satellite Radio Low Noise Amplifier 2.2 - 2.4 GHz |
MAALSS0013 |
160Kb/7P |
Satellite Radio Low Noise Amplifier 2.2 - 2.4 GHz |
Stealth Microwave, Inc.
|
SMTR2224-11G40-RSS |
315Kb/6P |
2.2-2.4 GHz 10W Bi-Directional Power Amplifier |
Tyco Electronics
|
AM42-0055 |
307Kb/4P |
1 Watt / 2 Watt S-Band Power Amplifier 2.2 - 2.4 GHz |
M/A-COM Technology Solu...
|
AM42-0055 |
106Kb/4P |
1 Watt/2 Watt S-Band Power Amplifier 2.2 - 2.4 GHz |
ON Semiconductor
|
MUN2231 |
127Kb/10P |
Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k August, 2012 ??Rev. 0 |
MUN2131 |
133Kb/10P |
Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k January, 2015 ??Rev. 4 |
MUN2231 |
103Kb/11P |
Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k January, 2015 ??Rev. 2 |
Nexperia B.V. All right...
|
PDTA123E_SERIES |
421Kb/15P |
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ 2004 Aug 02 |
PDTA123E_SER |
421Kb/15P |
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ 2004 Aug 02 |
PDTC123E_SERIES |
420Kb/15P |
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ 2004 Aug |
Molex Electronics Ltd.
|
987650-5702 |
737Kb/2P |
2.4 and 2.4, 5 GHz Ceramic and MID Chip Antennas 2.4 and 2.4, 5 GHz Ceramic and MID Chip Antennas 2021.02 |
World Produts Inc.
|
WPANT10046-C1A |
102Kb/2P |
2.2 GHz Embedded Antenna |
NXP Semiconductors
|
PEMD20_PUMD20 |
65Kb/10P |
NPN/PNP resistor-equipped transistors R1 = 2.2 kW, R2 = 2.2 kW Rev. 01-2 May 2005 |
Pulse A Technitrol Comp...
|
W3334B0100 |
1Mb/15P |
FPC ANTENNA 2.4 |
M/A-COM Technology Solu...
|
NPT2010 |
2Mb/10P |
DC-2.2 GHz HEMT |
Lapp.
|
4150500 |
314Kb/4P |
MULTI-STANDARD SC 2.2 13.01.2017 |
NXP Semiconductors
|
PEMB20_PUMB20 |
71Kb/11P |
PNP/PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW Rev. 03-1 September 2009 |
Nexperia B.V. All right...
|
PEMB20 |
71Kb/11P |
PNP/PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW Rev. 03 - 1 September 2009 |
PEMH20 |
283Kb/9P |
NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 04 - 15 November 2009 |