Manufacturer | Part No. | Datasheet | Description |

Micron Technology
|
MT46H32M16LFBF-6ITC |
3Mb / 96P |
512MB: x16, x32 Mobile Low-Power DDR SDRAM Features |

STMicroelectronics
|
NAND256-M |
228Kb / 23P |
256/512MB/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512MB (x16/x32, 1.8V) LPSDRAM, MCP |

Micron Technology
|
MT48LC128M4A2 |
2Mb / 68P |
512MB x4, x8, x16 SDRAM |

Integrated Silicon Solu...
|
IS43DR16320B-37CBLI |
729Kb / 30P |
512MB (x8, x16) DDR2 SDRAM |
IS43DR86400 |
867Kb / 29P |
512MB (x8, x16) DDR2 SDRAM |
IS43DR86400B |
760Kb / 29P |
512MB (x8, x16) DDR2 SDRAM |

OKI electronic componet...
|
MR27V3266D |
234Kb / 36P |
2M x16 / 1M x32 Synchronous OTP ROM |

Micron Technology
|
MT47H32M16CC3B |
2Mb / 133P |
512MB: x4, x8, x16 DDR2 SDRAM |
MT47H64M8B6-25ELDTR |
2Mb / 133P |
512MB: x4, x8, x16 DDR2 SDRAM |

STMicroelectronics
|
M58LW064A |
319Kb / 53P |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |

Micron Technology
|
MT46V32M16P-5BITF |
3Mb / 91P |
512MB: x4, x8, x16 DDR SDRAM Features |
MT46V32M16P-6TF |
1Mb / 93P |
512MB: x4, x8, x16 Double Data Rate SDRAM Features |

Samsung semiconductor
|
K5N1229ACD-BQ12 |
2Mb / 128P |
512MB (32M x16) Muxed Burst, Multi Bank SLC NOR Flash |

Micron Technology
|
MT46V64M8P-5BF |
1Mb / 93P |
512MB: x4, x8, x16 Double Data Rate (DDR) SDRAM SDRAM Features |

Samsung semiconductor
|
K7A203200B |
357Kb / 16P |
64Kx36/x32 Synchronous SRAM |

STMicroelectronics
|
M58LW128A |
932Kb / 65P |
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
M58LV064A |
450Kb / 65P |
64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |

Samsung semiconductor
|
K7A403609B |
419Kb / 19P |
128Kx36/x32 & 256Kx18 Synchronous SRAM |
K4X51323PC-7E |
246Kb / 25P |
16M x32 Mobile-DDR SDRAM |

SPANSION
|
S30MS-P |
944Kb / 41P |
1Gb/512MB, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit??Technology |