| Manufacturer | Part # | Datasheet | Description |
OSRAM GmbH
|
SPLMN81S9 |
206Kb/7P |
Passively Cooled Diode Laser Bar, 150 W qcw at 808 nm |
| SPLE03N81S9 |
231Kb/7P |
Aktiv gekulter Diodenlaser-Barren, 450 W qcw bei 808 nm |
Varitronix internationa...
|
VIM-808 |
36Kb/1P |
VIM-808 |
| VIM-808-DP |
36Kb/1P |
VIM-808-DP |
KR Electronics, Inc.
|
2907 |
44Kb/2P |
808 MHz Center Frequency |
OSRAM GmbH
|
SPLBG81-20S |
97Kb/4P |
Unmontierte Laserbarren, 50% Fullfaktor, 808 nm |
Hamamatsu Corporation
|
L11398 |
157Kb/2P |
High-Power qcw Laser Diode Stack Module |
Roithner LaserTechnik G...
|
AB081Q60W |
177Kb/3P |
High Power Single Bar qcw Infrared Laser Diode |
Hamamatsu Corporation
|
L11396 |
132Kb/2P |
High-Power qcw Laser Diode Stack Module |
Roithner LaserTechnik G...
|
AB081Q100W |
177Kb/3P |
High Power Single Bar qcw Infrared Laser Diode |
OSRAM GmbH
|
SPLBS81-9S |
184Kb/4P |
Un-mounted Laser Bars, 82.5% Fill-factor, 808 nm |
| SPLBS81-6 |
187Kb/4P |
Unmounted Laser Bars, 82.5% Filling Factor, 808 nm |
Siemens Semiconductor G...
|
SPLBXXX |
20Kb/2P |
Unmounted Laser Bars 20 W cw ... 100 W qcw |
OSRAM GmbH
|
SPLBX81-2S |
126Kb/4P |
Unmounted Laser Bars, 30% Fill-Factor, 808 nm |
| SPLMY81S9 |
205Kb/7P |
Passively Cooled Diode Laser Bar, 140 W cw at 808 nm |
| SPLE01N81G2 |
221Kb/7P |
Aktiv gekulter Diodenlaser-Barren, 60 W cw bei 808 nm |
| SPLE01Y81G2 |
221Kb/7P |
Aktiv gekulter Diodenlaser-Barren, 60 W cw bei 808 nm |
| SPLE03N81G2 |
231Kb/7P |
Aktiv gekulter Diodenlaser-Barren, 180 W cw bei 808 nm |
| SPLMY81G2 |
206Kb/7P |
Passively Cooled Diode Laser Bar, 45 W cw at 808 nm |
| SPLBG81-2S |
127Kb/4P |
Un-mounted Laser Bars, 50% Fill-factor, 808 nm |
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