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RDS Datasheet, PDF

Search Description : 'RDS' - Total: 1388 (1/70) Pages
Electronic ManufacturerPart NumberDatasheetElectronics Description

SeCoS Halbleitertechnol...
SSG4502CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
SSG4512CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m
SSG4520H_12 N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET
SST3585_12 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
SDN520C N-Ch: 4.5 A, 20 V, RDS(ON) 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m N & P-Channel Enhancement Mode MOSFET
STT3585_12 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
STT6602 N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET

International Rectifier
IRF7601 Power MOSFET(Vdss=20V, Rds(on)=0.035ohm)

Leshan Radio Company
LNB8308DT0AG N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.

SamHop Microelectronics...
SP8008 Super high dense cell design for low RDS(ON).

International Rectifier
IRHM9230 TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)
IRF644S Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)

SeCoS Halbleitertechnol...
SDT3A5N06-C 3.5A, 60V, RDS(on) 100 m(ohm) N-Channel Enhancement Mode Power MOSFET

SamHop Microelectronics...
SDUD03N50 Super high dense cell design for low RDS(ON).

International Rectifier
IRFZ24NS Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)
IRF5N3205 POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.008ohm, Id=55A*)

Kersemi Electronic Co.,...
BTB04-600B Advanced high cell denity trench technology for ultra RDS(ON)

Fairchild Semiconductor
BSS84-NL −0.13A, −50V. RDS(ON) = 10Ω @ VGS = −5 V

International Rectifier
IRFR420 Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.4A)
IRF430 TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)

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