Manufacturer | Part No. | Datasheet | Description |

Kemet Corporation
|
C430C475K3R5TA |
59Kb / 1P |
Capacitor, Ceramic, 4.7 UF, +/-10% Tol, 25 V, X7R |
LDECG4470KA0N00 |
94Kb / 1P |
Capacitor, film, 4.7 UF, +/-10% Tol, General Purpose, 50 VDC@125C |
B45196H2475M109 |
57Kb / 1P |
Capacitor, Tantalum, SMD, Molded, 4.7 UF, 3216, +/-20% Tol, 10V@85C |

TOKO, Inc
|
DFE201612E |
226Kb / 1P |
0.24~4.7?쵩 |

Kemet Corporation
|
EXV475M050A9DAA |
74Kb / 1P |
Aluminum Electrolytic, 105C LowZ, EXV, 4.7 UF, 20%, 50 V, -55/+105C |
EXV475M035A9BAA |
74Kb / 1P |
Aluminum Electrolytic, 105C LowZ, EXV, 4.7 UF, 20%, 35 V, -55/+105C |

ON Semiconductor
|
MUN2232 |
140Kb / 12P |
Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k August, 2012 ??Rev. 0 |
MUN2132 |
145Kb / 12P |
Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k September, 2012 ??Rev. 1 |
MUN2132 |
148Kb / 12P |
Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 kA March, 2013 ??Rev. 2 |

Kemet Corporation
|
T322B475K020AT |
67Kb / 1P |
Tantalum, MnO2 Tantalum, Commercial Grade, T322, 4.7 UF, 10%, 20 V, 4.5 Ohms |
T110B475K050AT |
57Kb / 1P |
Tantalum, MnO2 Tantalum, Commercial Grade, T110, 4.7 UF, 10%, 50 V, 2.5 Ohms |
T322D475K050AT |
67Kb / 1P |
Tantalum, MnO2 Tantalum, Commercial Grade, T322, 4.7 UF, 10%, 50 V, 2.5 Ohms |
C340C475M5U5TA |
51Kb / 1P |
Ceramic, Commercial Grade, GoldMax, 4.7 UF, 20%, 50 V, Z5U, Lead Spacing = 5.08mm |
T491A475M006AT |
82Kb / 1P |
Capacitor, Tantalum, SMD, MnO2, Molded, 4.7 UF, 3216, +/-20% Tol, 6.3 VDC (85C) |
T110B475K035AT |
57Kb / 1P |
Tantalum, MnO2 Tantalum, Commercial Grade, T110, 4.7 UF, 10%, 35 V, 3 Ohms |
T543D475M063ATE075 |
82Kb / 1P |
Capacitor, Tantalum, 4.7 UF, 7343, +/-20% Tol, 63 VDC (105C), Failure Rate=A |
T491B475M020AT |
82Kb / 1P |
Capacitor, Tantalum, SMD, MnO2, Molded, 4.7 UF, 3528, +/-20% Tol, 20 VDC (85C) |

Knowles Electronics
|
2403-263-00077 |
573Kb / 20P |
SPEAKER-16-4.7-MFD |

World Produts Inc.
|
WPANT10047-C1A |
105Kb / 2P |
4.7 GHz Embedded Antenna |

ON Semiconductor
|
MUN5332DW1 |
167Kb / 10P |
Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k September, 2012 ??Rev. 0 |