Manufacturer | Part No. | Datasheet | Description |

Sanyo Semicon Device
|
LC33864P-80 |
192Kb / 10P |
512K (65536 WORDS X 8 bits) Pseudo-SRAM |
LC32464P |
278Kb / 13P |
256K (65536 WORDS X 4 bits) DRAM Fast Page Mode |

List of Unclassifed Man...
|
HM6708SH |
453Kb / 11P |
65536-WORDS X 4 BITS HIGH SPEED STATIC RANDOM ACCESS MEMORY |

Sanyo Semicon Device
|
LC382161T-17 |
1Mb / 55P |
2 MEG(65536 WORDS x 16 bits x 2 banks) Synchronous DRAM |
LC321664BJ |
583Kb / 28P |
1 MEG (65536 WORDS X 16 bits) DRAM Fast Page Mode, Byte Write? |
LC321667BJ |
624Kb / 30P |
1 MEG (65536 WORDS X 16 bits) DRAM EDO Page Mode, Byte Write??? |
LC321664AJ |
964Kb / 30P |
1 MEG (65536 WORDS X 16 bits) DRAM Fast Page Mode, Byte Write |

Texas Instruments
|
TMS28F210 |
367Kb / 25P |
65536 BY 16-BIT FLASH MEMORY |
TMS28F512A |
311Kb / 21P |
65536 BY 8-BIT FLASH MEMORY |

OKI electronic componet...
|
MSM3764A |
836Kb / 17P |
65536-WORD X 1-BIT DYNAMIC RAM |

LG Semicon Co.,Ltd.
|
GM71C4400D |
1Mb / 23P |
1,048,576 WORDS x Bit Organization |

Fujitsu Component Limit...
|
MBM2764 |
568Kb / 12P |
UV ERASABLE 65536-BIT READ ONLY MEMORY |
MB8264A |
782Kb / 16P |
MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY |

LG Semicon Co.,Ltd.
|
GM71C4400E |
1Mb / 23P |
1,048,576 WORDS x Bit Organization |
GM71C4403D |
1Mb / 28P |
1,048,576 WORDS x Bit Organization |

Texas Instruments
|
TMS27C512 |
184Kb / 13P |
TMS27PC512 65536 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES |

LG Semicon Co.,Ltd.
|
GM71C4403E |
1Mb / 28P |
1,048,576 WORDS x Bit Organization |

Toshiba Semiconductor
|
TC554001FI |
370Kb / 9P |
524,288 WORDS x 8BIT STATIC RAM |

Mitsubishi Electric Sem...
|
M5M51016BTP-12VL-I |
75Kb / 7P |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
M5M51016BTP-12VL |
75Kb / 7P |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |