Manufacturer | Part # | Datasheet | Description |
Cree, Inc
|
CXB3590 |
2Mb/19P |
30?몀m optical source |
CG2H80030D |
824Kb/5P |
30 W, 8.0 GHz, GaN HEMT Die |
CGH60030D |
622Kb/8P |
30 W, 6.0 GHz, GaN HEMT Die |
CGHV27030S |
3Mb/28P |
30 W, DC - 6.0 GHz, GaN HEMT |
CGH80030D |
1Mb/5P |
30 W, 8.0 GHz, GaN HEMT Die |
CGHV40030 |
1Mb/11P |
30 W, DC - 6 GHz, 50V, GaN HEMT |
CMPA5585030F |
1Mb/17P |
30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier |
CGH27030S |
1Mb/16P |
30 W, DC - 6.0 GHz, 28 V, GaN HEMT |
CMPA5585030D |
453Kb/9P |
30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier |
CMPA2735030D |
529Kb/9P |
30 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier |
CGH35030F |
760Kb/8P |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX |
CGH35030F |
1Mb/12P |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX |
CGH55030F1 |
914Kb/13P |
30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX |
CGH27030F |
791Kb/8P |
30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX |
CMPA1D1E030D |
595Kb/6P |
30 W, 13.75 - 14.5 GHz, 40 V, GaN MMIC, Power Amplifier |
PTFB193404F |
610Kb/14P |
Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 ??1990 MHz |
CGH27030F |
1Mb/12P |
30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz |
PTAC260302FC |
636Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 ??2690 MHz |
CGH27030 |
1Mb/12P |
30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz |