Manufacturer | Part # | Datasheet | Description |
TriQuint Semiconductor
|
TGP2104 |
325Kb/9P |
30 -40 GHz 180Phase Shifter |
TGL4203-SM |
1Mb/14P |
DC -30 GHz Wideband Analog Attenuator |
TGP2100 |
368Kb/9P |
30 GHz 5-Bit Phase Shifter |
TGP2100-EPU |
221Kb/9P |
30 GHz 5-Bit Phase Shifter |
TGA3503-SM |
682Kb/12P |
2-30 GHz GaAs Wideband Gain Block |
TGA2818-SM |
636Kb/14P |
S-Band 30 W GaN Power Amplifier |
TGA2540-FL |
260Kb/16P |
30 to 3000 MHz GaN Power Amplifier |
TGA2818 |
645Kb/15P |
S-Band 30 W GaN Power Amplifier |
TGA4511-EPU |
180Kb/8P |
30-38 GHz Balanced Low Noise Amplifier |
TGA3504-SM |
673Kb/11P |
2 to 30 GHz GaAs Wideband Gain Block |
TQP0104 |
384Kb/12P |
30 W, DC to 4 GHz, GaN Power Transistor |
QPD1004 |
2Mb/20P |
25W, 50V, 30 ??1200 MHz, GaN RF Input-Matched Transistor |
AGR18030EF |
425Kb/9P |
30 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
AGR19030EF |
355Kb/10P |
30 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
T1L2003028-SP |
378Kb/4P |
30 W, 28V, 500 MHz-2 GHz, PowerbandTM LDMOS RF Power Transistor |
AGR09030E |
337Kb/7P |
30 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
AGR21030EF |
371Kb/9P |
30 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
T1P3003028-SP |
366Kb/7P |
30 W, 28V, 500 MHz-2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor |
QPD1020 |
1Mb/22P |
2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor |
QPD1011 |
1Mb/25P |
30 ??1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor |