Manufacturer | Part # | Datasheet | Description |
Infineon Technologies A...
|
2ED2748S01G |
579Kb/23P |
160 V half bridge SOI gate driver with integrated bootstrap diode V 1.0 2023-06-01 |
PTF191601 |
61Kb/4P |
LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz 2004-03-17 |
2ED2744S01G |
579Kb/23P |
160 V half bridge SOI gate driver with integrated bootstrap diode V 1.0 2023-06-01 |
2ED2742S01G |
572Kb/24P |
160 V half bridge SOI gate driver with integrated bootstrap diode V 1.0 2023-06-01 |
PTF191601F |
206Kb/10P |
Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz 2004-09-16 |
2ED2732S01G |
549Kb/22P |
160 V high side, low side SOI gate driver with integrated bootstrap diode V 1.0 2023-06-01 |
2ED2734S01G |
550Kb/22P |
160 V high side, low side SOI gate driver with integrated bootstrap diode V 1.0 2023-06-01 |
2ED2738S01G |
550Kb/22P |
160 V high side, low side SOI gate driver with integrated bootstrap diode V 1.0 2023-06-01 |
PTFB091507FH |
1Mb/13P |
Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz Rev. 03, 2011-03-14 |
PTFB091507FH |
1,015Kb/13P |
Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz Rev. 03.1, 2016-06-09 |
6ED2742S01Q |
2Mb/36P |
160 V pre-regulated three phase SOI gate driver with integrated charge pump, current sense amplifier, over-current protection, and bootstrap diodes V 1.0 2022-04-10 |