Manufacturer | Part # | Datasheet | Description |
Infineon Technologies A...
|
IPB156N22NFD |
989Kb/10P |
OptiMOSTMFD Power-Transistor, 220 V Rev.2.0,2017-06-19 |
PTFA092201E |
379Kb/11P |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 - 960 MHz Rev. 03.1, 2009-02-20 |
PTFA092211EL |
424Kb/10P |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 ??960 MHz Rev. 02, 2009-05-27 |
SPP20N65C3 |
1Mb/15P |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Rev. 3.0 2007-08-30 |
PTFA092213EL |
671Kb/10P |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920-960 MHz Rev. 04, 2010-11-04 |
PTFA082201E |
352Kb/10P |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 ??894 MHz Rev. 04.1, 2009-02-20 |
PXFC192207FH |
1Mb/9P |
Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 ??1990 MHz Rev. 04.1, 2016-06-22 |
SPP21N50C3 |
2Mb/14P |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Rev. 3.0 2007-08-30 |
SPP20N60C3 |
1Mb/15P |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Rev.3.1 2009-02-19 |
SPB12N50C3 |
1Mb/12P |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Rev. 2.4 2005-11-07 |
SPP17N80C3 |
1Mb/13P |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Rev. 2.6 2007-08-30 |