Manufacturer | Part # | Datasheet | Description |
OKI electronic componet...
|
MR27V802D |
58Kb/11P |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit One Time PROM |
MSM27C802CZ |
108Kb/12P |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit One Time PROM |
MR27V402E |
167Kb/16P |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit One Time PROM |
List of Unclassifed Man...
|
MR27V12852L |
176Kb/8P |
8M-Word 횞 16-Bit or 16M-Word 횞 8-Bit Page mode P2ROM |
MR26V01G53L |
219Kb/8P |
64M-Word x 16-Bit or 128M-Word x 8-Bit Page Mode P2ROM |
OKI electronic componet...
|
MR27V6454G |
88Kb/8P |
4M-Word x 16-Bit P2ROM |
Renesas Technology Corp
|
RMLV0816BGBG-4S2 |
340Kb/15P |
8Mb Advanced LPSRAM (512k word × 16bit) 2020.02.20 |
Toshiba Semiconductor
|
TC514100AP |
635Kb/21P |
4,194,304 WORD x BIT DYNAMIC RAM |
OKI electronic componet...
|
MSM534001E |
66Kb/8P |
524,288-Word x 8-Bit MASKROM |
Dallas Semiconductor
|
DS2229 |
374Kb/10P |
Word-Wide 8 Meg SRAM Stik |
Maxim Integrated Produc...
|
DS2229 |
380Kb/10P |
Word-Wide 8 Meg SRAM Stik 112099 |
Toshiba Semiconductor
|
TC55257DPL |
504Kb/13P |
32,768 WORD-8 BIT STATIC RAM |
Renesas Technology Corp
|
RMLV0808BGSB-4S2 |
323Kb/13P |
8Mb Advanced LPSRAM (1024k word × 8bit) 2020.02.20 |
Hitachi Semiconductor
|
HN27C4000G |
124Kb/20P |
524288-Word 짰8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM |
Renesas Technology Corp
|
M5M29KE131BTP |
336Kb/33P |
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY |
Toshiba Semiconductor
|
TC514258P |
1Mb/18P |
262,144 WORD X4 BIT DYNAMIC RAM |
Renesas Technology Corp
|
RMLV0816BGSB-4S2 |
330Kb/14P |
8Mb Advanced LPSRAM (512k word × 16bit) 2020.02.20 |
OKI electronic componet...
|
MSM548333 |
423Kb/42P |
240,384-Word x 8-bit + 240,384-Word x 4-bit Triple Port type Field Memory |
Cypress Semiconductor
|
CY7C1510KV18 |
920Kb/33P |
72-Mbit QDR II SRAM 2-Word Burst Architecture Two-word burst on all accesses |
Toshiba Semiconductor
|
TC514100APL |
632Kb/21P |
4,194,304 WORD x BIT DYNAMIC RAM |