Electronic Components Datasheet Search |
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ACCORDING Datasheet, PDF |
Searched Keyword : 'ACCORDING' - Total: 16 (1/1) Pages |
Manufacturer | Part # | Datasheet | Description |
Infineon Technologies A... |
ESD110-B1 |
884Kb/17P |
ESD / transient protection according to |
ESD218-B1 |
788Kb/15P |
ESD / transient protection according to Revision 1.1, 2015-01-13 |
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ESD217-B1-02EL |
420Kb/13P |
ESD / transient protection according to | |
IDP40E65D2 |
1Mb/10P |
Qualified according to JEDEC for target applications Rev.2.2,2014-03-31 |
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IDP08E65D2 |
1Mb/10P |
Qualified according to JEDEC for target applications Rev.2.2,2014-08-28 |
|
IDP15E65D2 |
1Mb/10P |
Qualified according to JEDEC for target applications Rev.2.2,2014-08-26 |
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BFS483 |
566Kb/6P |
Qualification report according to AEC-Q101 available 2013-07-25 |
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IDW40E65D2 |
1Mb/10P |
Qualified according to JEDEC for target applications Rev.2.1,2013-12-16 |
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IDW50E60 |
1Mb/11P |
Qualified according to JEDEC for target applications Rev.2.2,2014-02-24 |
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IDW15E65D2 |
1Mb/10P |
Qualified according to JEDEC for target applications Rev.2.2,2014-08-26 |
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IHW50N65R5 |
1Mb/15P |
Qualified according to JESD-022 for target applications Rev.2.3,2014-12-16 |
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SMBD914 |
72Kb/6P |
Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101 2007-03-28 |
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SMBD7000 |
72Kb/6P |
Silicon Switching Diode Array For high-speed switching applications Qualified according AEC Q101 2007-03-28 |
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IPD03N03LA |
304Kb/9P |
Ideal for high-frequency dc/dc converters Qualified according to JEDEC for target applications Rev. 0.93 2004-10-27 |
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IPB60R060C7 |
1Mb/15P |
CoolMOS??C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Rev.2.0,2015-11-30 |
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IPB60R120C7 |
1Mb/15P |
CoolMOS??C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Rev.2.0,2015-11-30 |
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