Manufacturer | Part # | Datasheet | Description |
Renesas Technology Corp
|
CD22M3494 |
546Kb/10P |
16 x 8 x 1 BiMOS-E Crosspoint Switch |
CA3140 |
1Mb/24P |
4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output |
CA3260 |
289Kb/4P |
4MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output |
CA3130 |
1Mb/17P |
15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output |
CA3240 |
868Kb/15P |
Dual, 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output |
CA3420 |
330Kb/5P |
0.5MHz, Low Supply Voltage, Low Input Current BiMOS Operational Amplifier |
CA5420A |
558Kb/9P |
0.5MHz, Low Supply Voltage, Low Input Current BiMOS Operational Amplifiers |
CA5260 |
615Kb/7P |
3MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output |
UPD70F3786GJ-GAE-AX |
9Mb/1817P |
RENESAS MCU V850ES/Jx3-E Microcontrollers |
ISL6113 |
1Mb/24P |
Dual Slot PCI-E Hot Plug Controllers |
ISL81807 |
1,006Kb/41P |
80V Dual Synchronous Boost Controller Optimized to Drive E-mode GaN FET Mar 22, 2022 |
M3T-DUMMY100S |
153Kb/1P |
Dummy IC for 100-pin 0.65mm-pitch QFP (100P6S-A, 100P6S-E) |
ISL81806 |
943Kb/42P |
80V Dual Synchronous Buck Controller Optimized to Drive E-mode GaN FET Jan 28, 2022 |
PF08109B |
249Kb/25P |
MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone |
PF08127 |
140Kb/18P |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone Oct. 2002 |
E2081606_PF08127B |
183Kb/16P |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone |
NX6240GP |
200Kb/7P |
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION |
NX6240GP |
200Kb/7P |
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION |