Manufacturer | Part # | Datasheet | Description |
Infineon Technologies A...
|
SPN01N60C3 |
7Mb/9P |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Rev. 2.2 2005-02-21 |
SPP04N60C3 |
594Kb/14P |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Rev. 3.1 2009-11-26 |
IPP023NE7N3G |
466Kb/10P |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 2.11 2009-11-11 |
IPB108N15N3G |
438Kb/11P |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 2.1 2009-12-01 |
SPP15N60C3 |
689Kb/14P |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Rev. 3.2 2009-12-22 |
SPP04N60S5 |
1,001Kb/11P |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Rev. 2.6 2007-08-30 |
IPP028N08N3G |
463Kb/10P |
OptiMOS짰3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 1.0 2008-01-25 |
IPB600N25N3G |
426Kb/11P |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 2.2 2009-10-23 |
SPP17N80C3 |
1Mb/13P |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Rev. 2.6 2007-08-30 |
SPP21N50C3 |
2Mb/14P |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Rev. 3.0 2007-08-30 |
SPP20N60C3 |
1Mb/15P |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Rev.3.1 2009-02-19 |
SPB12N50C3 |
1Mb/12P |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Rev. 2.4 2005-11-07 |
6ED2742S01Q |
2Mb/36P |
160 V pre-regulated three phase SOI gate driver with integrated charge pump, current sense amplifier, over-current protection, and bootstrap diodes V 1.0 2022-04-10 |