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COST NOISE Datasheet, PDF

Lowpower Semiconductor inc(8)Nuvotem Talema(4)NXP Semiconductors(47)Panasonic Battery Group(3)Panasonic Semiconductor(45)Pasternack Enterprises, Inc.(199)PCA ELECTRONICS INC.(1)PEAK electronics GmbH(3)Peregrine Semiconductor(6)Peregrine Semiconductor Corp.(10)Pericom Semiconductor Corporation(2)PETERMANN-TECHNIK(131)PhaseLink Corporation(79)Phihong USA Inc.(10)Pixart Imaging Inc.(2)Pletronics, Inc.(1)Pomona Electronics(4)Potato Semiconductor Corporation(9)Power Analog Micoelectronics(4)Power IC Ltd.(4)Power Integrations, Inc.(15)Power System Technology(1)Power-One(1)PREMIER DEVICES, INC.(1)Premier Magnetics, Inc.(1)Protek Devices(2)Pulse A Technitrol Company(4)PulseCore Semiconductor(1)QUARTZCOM the communications company(21)Radiometrix Ltd(11)Raltron Electronics Corporation(1)Recom International Power(10)Renesas Technology Corp(149)RF Micro Devices(147)RFHIC(25)rfsolutions.ltd(8)Rhombus Industries Inc.(2)Richtek Technology Corporation(22)RICOH electronics devices division(31)Riedon Powertron(1)Rochester Electronics(1)Rohm(55)Roithner LaserTechnik GmbH(3)RSG Electronic Components GmbH(2)Samsung semiconductor(21)Samtec, Inc(8)Sangdest Microelectronic (Nanjing) Co., Ltd(2)Sanken electric(5)Sanyo Semicon Device(16)Schurter Inc.(6)Seaward Electronics Inc.(6)SeCoS Halbleitertechnologie GmbH(6)Seme LAB(4)Semtech Corporation(26)SEMTECH ELECTRONICS LTD.(1)Sensitron(1)Sensortechnics GmbH(2)Seoul Semiconductor(19)SG Micro Corp(3)Sharp Electrionic Components(19)SHIKE Electronics(1)Shindengen Electric Mfg.Co.Ltd(9)Siemens Semiconductor Group(65)Silicon Laboratories(5)Sipex Corporation(6)SIRENZA MICRODEVICES(19)Skyworks Solutions Inc.(15)SL Power Electronics(1)SMSC Corporation(9)Soberton Inc.(3)Sony Corporation(33)Sparkle Power Inc.(3)Spectrum Microwave, Inc.(20)Stanford Microdevices(3)STMicroelectronics(129)Suntan Capacitors(5)Supertex, Inc(27)SYNERGY MICROWAVE CORPORATION(5)Tachyonics CO,. LTD(1)TAITRON Components Incorporated(1)Taiwan Memory Technology(2)Taiwan Semiconductor Company, Ltd(53)Taoglas antenna solutions(2)TDK Electronics(7)TE Connectivity Ltd(6)TelCom Semiconductor, Inc(3)Teledyne Technologies Incorporated(41)TEMEX(38)TEMIC Semiconductors(3)Teridian Semiconductor Corporation(3)Texas Instruments(127)Texas Instruments(161)Tiger Electronic Co.,Ltd(2)Token Electronics Industry Co., Ltd.(1)TOKO, Inc(11)Torex Semiconductor(12)Toshiba Semiconductor(258)Total Power International(6)TRACO Electronic AG(2)Transcom, Inc.(34)TriQuint Semiconductor(44)TT Electronics.(4)
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Search Description : 'COST NOISE ' - Total: 65 (1/4) Pages
Electronic ManufacturerPart NumberDatasheetElectronics Description

Siemens Semiconductor G...
CFY77 AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
BF2030W Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
BAT14-098 Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)
BFP193 NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
BFR106 NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers)
BFR193W NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
BFG196 NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)
BAT15-04 Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)
BF996S Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure)
CFY30 GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
BFR181W NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
BFQ193 NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
BFR93A NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA)
BFQ28 LOW NOISE NPN SILICON MICROWAVE TRANSISTOR UP TO 4GHz
BF1005S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
BAT15-03W Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)
BFT66 EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS
BFP196 NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)
BFP182R NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
BF2030 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)

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