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COST NOISE Datasheet, PDF

Lowpower Semiconductor inc(15)Ningbo Tianbo Ganglian Electronics Co.,Ltd(2)Nuvotem Talema(4)NXP Semiconductors(47)Panasonic Battery Group(3)Panasonic Semiconductor(45)Pasternack Enterprises, Inc.(211)PCA ELECTRONICS INC.(1)PEAK electronics GmbH(3)Peregrine Semiconductor(6)Peregrine Semiconductor Corp.(10)Pericom Semiconductor Corporation(2)PETERMANN-TECHNIK(131)PhaseLink Corporation(79)Phihong USA Inc.(10)Pixart Imaging Inc.(2)Pletronics, Inc.(1)Pomona Electronics(4)Potato Semiconductor Corporation(9)Power Analog Micoelectronics(4)Power IC Ltd.(4)Power Integrations, Inc.(15)Power System Technology(1)Power-One(1)PREMIER DEVICES, INC.(1)Premier Magnetics, Inc.(1)Protek Devices(2)PUI audio inc.(7)Pulse A Technitrol Company(4)PulseCore Semiconductor(1)QUARTZCOM the communications company(21)Radiometrix Ltd(11)Raltron Electronics Corporation(1)Recom International Power(10)RENCO ELECTRONICS, INC.(1)Renesas Technology Corp(149)RF Micro Devices(147)RFHIC(25)rfsolutions.ltd(8)Rhombus Industries Inc.(2)Richtek Technology Corporation(25)RICOH electronics devices division(31)Riedon Powertron(1)Rochester Electronics(1)Rohm(55)Roithner LaserTechnik GmbH(3)RSG Electronic Components GmbH(2)Samsung semiconductor(21)Samtec, Inc(8)Sangdest Microelectronic (Nanjing) Co., Ltd(2)Sanken electric(5)Sanyo Semicon Device(16)Savitech Corp.(1)Schurter Inc.(6)Seaward Electronics Inc.(6)SeCoS Halbleitertechnologie GmbH(6)Seme LAB(4)Semtech Corporation(26)SEMTECH ELECTRONICS LTD.(1)Sensitron(1)Sensortechnics GmbH(2)Seoul Semiconductor(19)SG Micro Corp(3)Sharp Electrionic Components(19)SHIKE Electronics(1)Shindengen Electric Mfg.Co.Ltd(9)SHOUDING Shouding Semiconductor(1)Siemens Semiconductor Group(65)SIFIRST TECHNOLOGIES NANHAI LIMITED(1)Silicon Laboratories(5)Silver Telecom 2019(2)Sipex Corporation(6)SIRENZA MICRODEVICES(19)SJM Prewell. All Rights Reserved.(9)Skyworks Solutions Inc.(18)SL Power Electronics(1)SMSC Corporation(9)Soberton Inc.(3)Sony Corporation(33)Soshin electric Co., Ltd.(1)Sparkle Power Inc.(3)Spectrum Microwave, Inc.(20)Stanford Microdevices(3)STMicroelectronics(131)Suntan Capacitors(5)Supertex, Inc(27)SYNERGY MICROWAVE CORPORATION(5)Tachyonics CO,. LTD(1)TAI-SAW TECHNOLOGY CO., LTD.(1)TAI-TECH Advanced Electronics Co., Ltd.(1)TAITIEN ELECTRONICS CO.,LTD(9)TAITRON Components Incorporated(1)Taiwan Memory Technology(2)Taiwan Semiconductor Company, Ltd(53)Taoglas antenna solutions(2)TDK Electronics(12)TE Connectivity Ltd(6)TEKTRONIX, INC.(1)TelCom Semiconductor, Inc(3)Teledyne Technologies Incorporated(41)TEMEX(38)TEMIC Semiconductors(3)Teridian Semiconductor Corporation(3)Texas Instruments(132)Texas Instruments(192)Tiger Electronic Co.,Ltd(3)Token Electronics Industry Co., Ltd.(1)TOKO, Inc(11)Torex Semiconductor(12)Toshiba Semiconductor(260)Total Power International(6)TRACO Electronic AG(2)Transcom, Inc.(35)TriQuint Semiconductor(44)TT Electronics.(4)
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Search Description : 'COST NOISE ' - Total: 65 (1/4) Pages
Electronic ManufacturerPart NumberDatasheetElectronics Description

Siemens Semiconductor G...
CFY77 AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
BFG193 NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
BAT15-098 Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type)
BFR181 NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
BFP193 NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
BF2040 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
BF1005S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
BAT14-098 Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)
TDA4320X FM-IF with Counter Output, Field Strength Indicator, Noise Detector and MUTE Setting
BAT15-03W Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)
BFP183 NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
BF1012S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
BFG19S NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)
BFP183W NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
BF2030W Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
BFP182R NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
BFR183W NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)
BFP196W NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)
BFQ19S NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and)
BFY193 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.)

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