DEVICE SPECIFICATION FOR PHOTOCOUPLER Datasheet(PDF) - BZT03 - New Jersey Semi-Conductor Products, Inc.

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DEVICE SPECIFICATION FOR PHOTOCOUPLER Datasheet, PDF

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Searched Keyword : 'DEVICE SPECIFICATION FOR PHOTOCOUPLER ' - Total: 30 (1/2) Pages

Manufacturer	Part #	Datasheet	Description
New Jersey Semi-Conduct...	BZT03	268Kb/3P	Zener Diodes with Surge Current SPECIFICATION
	BZW03	269Kb/3P	Zener Diodes with Surge Current SPECIFICATION
	MCC56-12IO1B	226Kb/3P	Thyristor FOR line frequency
	2SC2464	91Kb/1P	Characteristics FOR FPAK Transistors
	BLU20	49Kb/1P	Designed FOR Class C
	2N3244	181Kb/2P	PNP SILICON, TRANSISTORS FOR MEDIUM-CURRENT
	1N5711	124Kb/1P	Schottky Barrier Diodes FOR General Purpose Applications
	MRF148A	84Kb/2P	Designed FOR power amplifier applications in industrial
	BDY87	134Kb/2P	NPN Darlington stages FOR AF and switching applications
	2N398	131Kb/1P	PNP germanium transistor FOR high-voltage, audio-frequency applications
	2SC3604	198Kb/2P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
	MRF10502	76Kb/2P	Designed FOR 1025-1150 MHz pulse common base amplifier
	C6	84Kb/1P	FOR High Volume Light Industrial, Computer, and Consumer Applications
	C611	84Kb/1P	FOR High Volume Light Industrial, Computer, and Consumer Applications
	1N6461	80Kb/1P	HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR MOST CRITICAL CIRCUITS.
	1N6103A	89Kb/1P	HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR MOST CRITICAL CIRCUITS
	AD149	153Kb/2P	PNP Transistors FOR AF power stages up to 20 W
	2N1416	96Kb/1P	PNP, Medium power, alloy junction transistors FOR audio output applications
	IR413	474Kb/2P	High -voltage NPN silicon transistors designed FOR medium-to-high- voltage inverters
	2SC1940	123Kb/2P	The 2SC1940 is designed FOR use in driver stages of audio frequency amplifiers

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