DIFFUSED Datasheet(PDF) - 2SC3588-Z - NEC

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DIFFUSED Datasheet, PDF

Searched Keyword : 'DIFFUSED' - Total: 17 (1/1) Pages

Manufacturer	Part #	Datasheet	Description
NEC	2SC3588-Z	238Kb/4P	NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3
	2SC3631-Z	235Kb/4P	NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3
	2SB768	190Kb/4P	PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3?
	2SA1412-Z	233Kb/4P	PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3???
	2SA1413-Z	271Kb/6P	PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3???
	03P2J	298Kb/4P	ALL DIFFUSED TYPE SCR POWER MINI MOLD
	2SA1400-Z	215Kb/4P	PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3?
	03P2M	462Kb/4P	0.47 A(R.M.S.)ALL DIFFUSED MOLD TYPE SCR
	2SC4942	115Kb/6P	NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
	2SA1871	116Kb/6P	PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
	2SC3569	128Kb/6P	NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
	2SC2335	114Kb/6P	NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
	2SB965	40Kb/1P	PNP Silicon Epitaxial/NPN Triple Diffused Transistor Audio Frequency Power Amplifier
	2SB546A	567Kb/4P	VERTICAL DEFLECTION OUTPUT FOR COLOR TV PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTOR
	2SC4346	112Kb/5P	NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING
	2SD1592	89Kb/4P	NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING
	5P4SMA	251Kb/6P	P gate all Diffused mold type Thyristor granted 5 A on-state Average current, with rated Voltages up to 600V

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What is DIFFUSED

In electronic components, DIFFUSED is a term commonly used in the semiconductor manufacturing process.

In the semiconductor manufacturing process, DIFFUSED generally refers to a technology that dissolves impurities into a semiconductor material and causes an oxidation reaction to create a desired semiconductor device.

These technologies are one of the important processes in determining the characteristics of semiconductor devices.

For example, in semiconductor devices using silicon, diffusion (a technology that causes an oxidation reaction by melting impurities) is commonly used to form a pn junction (positive-negative junction) inside the device.

This pn junction is one of the basic components of diodes, transistors, and integrated circuits used in various electronic components, and is an important factor in determining the electrical characteristics of semiconductor devices.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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