DIE Datasheet(PDF) - M14C32DD - STMicroelectronics

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	M14C32DD	16Kb/2P	M14C32 Die Description
	M14C16DD	14Kb/2P	M14C16 Die Description
	M14C04DD	12Kb/2P	M14C04 Die Description
	TN0193	117Kb/6P	LRIS64K bumped die description
	M28R400CT-KGD	461Kb/11P	Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory
	M69KB096AB	486Kb/73P	64 Mbit (4Mb x 16), 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM
	STG25H120F2D7	252Kb/10P	1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing May 2015 Rev 1
	STG60H65FBD7	428Kb/10P	Trench gate field-stop 650 V, 60 A high-speed HB series IGBT die in D7 packing Rev 3 - July 2023
	STG35M120F3D7	184Kb/9P	1200 V, 35 A, trench gate field-stop, M series, low-loss IGBT die in D7 packing DS12463 - Rev 1 - February 2018
	STG15M120F3D7	263Kb/10P	Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing Rev 3 - August 2022
	STG15M120F3D8	224Kb/8P	1200 V, 15 A trench gate field‑stop M series low‑loss IGBT die in D8 packing Rev 1 - January 2022
	STG50M120F3D7	243Kb/10P	Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing Rev 2 - August 2022
	STG200M65F2D8AG	292Kb/11P	Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing May 2021 Rev 4
	M65KA512AB	502Kb/55P	512Mbit (4 Banks x 8M x 16), 133 MHz Clock Rate, Bare Die, 1.8 V Supply, Low Power SDRAM
	STG200G65FD8AG	505Kb/11P	Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packing Rev 1 - July 2023

DIE Datasheet, PDF

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