| Manufacturer | Part No. | Datasheet | Description |
National Semiconductor ...
|
DS90CR286A_09 |
378Kb / 14P |
+3.3V Rising Edge Data Strobe LVDS Receiver 28-Bit Channel Link-66 MHz, +3.3V Rising Edge Strobe LVDS Receiver 21-Bit Channel Link-66 MHz |
| DS90CR286A |
250Kb / 12P |
+3.3V Rising Edge Data Strobe LVDS Receiver 28-Bit Channel Link─66 MHz, +3.3V Rising Edge Strobe LVDS Receiver 21-Bit Channel Link─66 MHz |
| DS90CR216A_04 |
312Kb / 13P |
+3.3V Rising Edge Data Strobe LVDS Receiver 28-Bit Channel Link-66 MHz, +3.3V Rising Edge Strobe LVDS Receiver 21-Bit Channel Link-66 MHz |
Fairchild Semiconductor
|
RMPA1765_06 |
578Kb / 8P |
K-PCS, CDMA, CDMA2000-1X and WCDMA Power Edge Power Amplifier Module |
Infineon Technologies A...
|
IDH04G65C5_12 |
1Mb / 13P |
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. |
| IDW40G65C5_12 |
1Mb / 11P |
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. |
Micrel Semiconductor
|
SY605 |
79Kb / 8P |
125MHz WRITE PROGRAMMABLE TIMING EDGE VERNIER |
Allegro MicroSystems
|
ATS616LSG_10 |
486Kb / 14P |
The ATS616 gear-tooth sensor IC is a peak-detecting device that uses automatic gain control and an integrated capacitor to provide extremely accurate gear edge detection down to.. |
Infineon Technologies A...
|
IDW12G65C5_12 |
1Mb / 11P |
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. |
Intersil Corporation
|
HCTS374MS |
183Kb / 11P |
Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered |
Integrated Device Techn...
|
IDT74LVCH162374A |
271Kb / 6P |
3.3V CMOS 16-BIT EDGE TRIGGERED D-TYPE FLIP-FLOP WITH 3-STATE OUTPUTS, 5 VOLT TOLERANT I/O, BUS-HOLD |
TriQuint Semiconductor
|
TQM7M5013 |
138Kb / 1P |
Quad-Band GSM850/GSM900/DCS/PCS Advanced Input Power Controlled EDGE PAM |
Rohm
|
NE3002-VA10A |
186Kb / 5P |
Near edge thermal printhead (300 dots / inch) |
Hirose Electric
|
CR22-20D-2.54DS |
183Kb / 5P |
2.54mm Pitch Card Edge Connector |
Rohm
|
SH2002-DC90A |
87Kb / 6P |
Near edge thermal printhead (8dots / mm) |
Infineon Technologies A...
|
IDH09G65C5_12 |
1Mb / 11P |
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. |
Intersil Corporation
|
ISL89367 |
462Kb / 13P |
High Speed, Dual Channel, 6A, MOSFET Driver With Programmable Rising and Falling Edge Delay Timers |
TriQuint Semiconductor
|
TQM7M5013_15 |
241Kb / 1P |
Quad-Band Input Power Controlled EDGE PAM |
NXP Semiconductors
|
74LVC162374A |
86Kb / 16P |
16-bit edge triggered D-type flip-flop with 30 ohmseries termination resistors; 5 V input/output tolerant; 3-state |
Rohm
|
NE3002-WA30A |
73Kb / 4P |
Near edge thermal printhead (with thermal historical control) |
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