EDGE-TRIGGERED Datasheet(PDF) - T533N - Infineon Technologies AG

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	T533N	322Kb/10P	Light triggered thyristor with internal Break over Diode 2014-01-23 Revision: 3.0
	T4003N	259Kb/10P	Light triggered thyristor with internal Break over Diode 2011-05-02 Revision: 9.0
	T1503N	275Kb/10P	Light triggered thyristor with internal Break over Diode 2011-05-02 Revision: 8.0
	T2563N	363Kb/10P	Light triggered thyristor with internal Break over Diode 2011-05-02 Revision: 11.0
	PMB6258	193Kb/2P	SMARTi DC+ EDGE RF Transceiver
	PTF180901E	169Kb/2P	GSM/EDGE RF Power FET 2004-01-01
	PMB8876	201Kb/2P	S-GOLD2??Multimedia Engine with Advanced EDGE Modem Functionality 2004-01-01
	IDH06G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10
	IDH08G65C5	1Mb/13P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10
	IDH16G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10
	IDW30G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15
	IDH03G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10
	IDH09G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10
	IDH10G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10
	IDW10G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15
	IDW20G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15
	IDH20G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10
	IDW16G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15
	IDW12G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15
	IDH05G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10

EDGE-TRIGGERED Datasheet, PDF

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