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EFFECT Datasheet, PDF

Searched Keyword : 'EFFECT' - Total: 20 (1/1) Pages
ManufacturerPart #DatasheetDescription
Company Logo Img
Tyco Electronics
MAPLST0810-045CF Datasheet pdf image
136Kb/4P
RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 45W, 26V
MAPLST0810-090CF Datasheet pdf image
138Kb/4P
RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
MAPLST1617-030CF Datasheet pdf image
203Kb/5P
RF Power Field Effect Transistor LDMOS, 1600 - 1700 MHz, 30W, 28V
MAPLST1820-060CF Datasheet pdf image
171Kb/4P
RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 60W, 26V
MAPLST2122-030CF Datasheet pdf image
162Kb/5P
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 30W, 28V
MAPLST0810-090CF-05-2004 Datasheet pdf image
138Kb/4P
RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
MAPLST0822-002PP Datasheet pdf image
259Kb/10P
RF Power Field Effect Transistor LDMOS, 800-2200 MHz, 2W, 28V
MAPLST1900-060CF Datasheet pdf image
234Kb/5P
RF Power Field Effect Transistor LDMOS, 1890 - 1925 MHz, 60W, 26V
MAPLST2122-060CF Datasheet pdf image
172Kb/5P
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V
MAPLST0810-030CF-05-2004 Datasheet pdf image
137Kb/4P
RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 30W, 26V
MAPL-000817-015C00 Datasheet pdf image
246Kb/8P
RF Power Field Effect Transistor LDMOS, 800-1700 MHz, 15W, 26V
MAPLST0810-030CF Datasheet pdf image
137Kb/4P
RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 30W, 26V
MAPLST1820-030CF Datasheet pdf image
181Kb/5P
RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 30W, 26V
MAPLST1820-090CF Datasheet pdf image
129Kb/4P
RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 90W, 26V
MAPLST1900-030CF Datasheet pdf image
236Kb/5P
RF Power Field Effect Transistor LDMOS, 1890 - 1925 MHz, 30W, 26V
MAPLST0810-045CF Datasheet pdf image
136Kb/4P
RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 45W, 26V
MAPLST2122-015CF Datasheet pdf image
238Kb/5P
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V
MAPLST2122-090CF Datasheet pdf image
164Kb/5P
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V
MAPL-000817-015CPC-072706 Datasheet pdf image
199Kb/5P
RF Power Field Effect Transistor LDMOS, 800-1700 MHz, 15W, 26V
MRF151A Datasheet pdf image
282Kb/8P
The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

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What is EFFECT


EFFECT of electronic parts means physical, electrical, and chemical changes of parts that can be caused by various factors.

For example, the electrical characteristics of a part can be affected by environmental changes, or the physical properties of a part can change due to use conditions.

In electronic parts, EFFECT is one of the important factors to evaluate the reliability of parts.

Depending on the environment in which the part is used, EFFECT may occur, which may shorten the life of the part or, in serious cases, damage the function of the part.

Therefore, it is important to select and design parts considering their EFFECT.

For example, the EFFECT of electronic components can be affected by environmental factors such as high temperature, high humidity, vibration, shock, and radiation.

Components used in these environments must be resistant to the environment, and components with high reliability must be selected and designed.

Therefore, when selecting or designing electronic components, it is important to secure reliability of components by considering environmental factors such as EFFECT.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.


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