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EFFECT Datasheet, PDF

Searched Keyword : 'EFFECT' - Total: 42 (1/3) Pages
ManufacturerPart #DatasheetDescription
Company Logo Img
Stanson Technology
STC6332 Datasheet pdf image
421Kb/9P
The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
ST2319SRG Datasheet pdf image
229Kb/8P
ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STP9235 Datasheet pdf image
331Kb/6P
STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
ST2318SRG Datasheet pdf image
221Kb/7P
ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STP4403 Datasheet pdf image
321Kb/6P
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
STP9434 Datasheet pdf image
314Kb/6P
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
ST3422A Datasheet pdf image
338Kb/6P
The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STN4346 Datasheet pdf image
352Kb/7P
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4426 Datasheet pdf image
362Kb/6P
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP6308 Datasheet pdf image
420Kb/6P
STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4392 Datasheet pdf image
383Kb/7P
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4480 Datasheet pdf image
742Kb/6P
STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4850 Datasheet pdf image
532Kb/6P
STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN1810 Datasheet pdf image
966Kb/7P
STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4438 Datasheet pdf image
269Kb/6P
STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4546 Datasheet pdf image
363Kb/6P
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP4435A Datasheet pdf image
311Kb/6P
STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP4931 Datasheet pdf image
334Kb/6P
STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
ST2304SRG Datasheet pdf image
630Kb/6P
ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST2341A Datasheet pdf image
582Kb/6P
ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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What is EFFECT


EFFECT of electronic parts means physical, electrical, and chemical changes of parts that can be caused by various factors.

For example, the electrical characteristics of a part can be affected by environmental changes, or the physical properties of a part can change due to use conditions.

In electronic parts, EFFECT is one of the important factors to evaluate the reliability of parts.

Depending on the environment in which the part is used, EFFECT may occur, which may shorten the life of the part or, in serious cases, damage the function of the part.

Therefore, it is important to select and design parts considering their EFFECT.

For example, the EFFECT of electronic components can be affected by environmental factors such as high temperature, high humidity, vibration, shock, and radiation.

Components used in these environments must be resistant to the environment, and components with high reliability must be selected and designed.

Therefore, when selecting or designing electronic components, it is important to secure reliability of components by considering environmental factors such as EFFECT.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.


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