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EXTREME Datasheet, PDF

Searched Keyword : 'EXTREME' - Total: 18 (1/1) Pages
ManufacturerPart #DatasheetDescription
Company Logo Img
Infineon Technologies A...
TLE42994 Datasheet pdf image
1Mb/36P
Extreme Low Current Consumption In ON State
TLE42994V33 Datasheet pdf image
1Mb/33P
Extreme Low Current Consumption In ON State
SPI15N65C3 Datasheet pdf image
305Kb/10P
CoolMOSTM Power Transistor Features Extreme dv/dt rated
Rev. 2.0 2007-09-10
SPP24N60CFD Datasheet pdf image
338Kb/12P
CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability
Rev. 1.2 2007-08-28
IPW50R299CP Datasheet pdf image
536Kb/11P
CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability
Rev. 2.0 2007-11-07
IPW50R350CP Datasheet pdf image
537Kb/11P
CoolMOSTM Power Transistor Features Ultra low gate charge Extreme dv/dt rated
Rev. 2.0 2007-11-07
SPA08N80C3 Datasheet pdf image
338Kb/10P
CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability
Rev. 3.0 2009-12-22
SPA20N60CFD Datasheet pdf image
654Kb/12P
CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated
Rev. 1.3 2009-12-22
SPP07N60C3 Datasheet pdf image
625Kb/15P
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Rev. 3.2 2009-11-27
SPP20N65C3 Datasheet pdf image
622Kb/15P
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Rev. 3.1 2009-12-01
SPP03N60C3 Datasheet pdf image
599Kb/14P
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Rev. 3.1 2009-11-26
SPP04N60C3 Datasheet pdf image
594Kb/14P
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Rev. 3.1 2009-11-26
SPP15N60C3 Datasheet pdf image
689Kb/14P
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Rev. 3.2 2009-12-22
SPP04N60S5 Datasheet pdf image
1,001Kb/11P
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Rev. 2.6 2007-08-30
SPW11N80C3 Datasheet pdf image
684Kb/11P
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Rev. 2.9 2008-10-15
SPW17N80C3 Datasheet pdf image
683Kb/11P
CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated
Rev. 2.9 2008-10-15
SPB07N60C3 Datasheet pdf image
1Mb/13P
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Rev. 2.5 2005-09-14
SPN01N60C3 Datasheet pdf image
7Mb/9P
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Rev. 2.2 2005-02-21

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What is EXTREME


In electronic components, “extreme” refers to components that operate under extreme conditions or have extremely high performance. This term can be used in a variety of contexts:

Extreme Environment: Some electronic components are designed to operate in environments with extremes of temperature, pressure, or humidity. These components can be used in extreme environments such as space, marine, alpine and mineral mining.

Extreme Performance: Some electronic components have extreme performance, providing high speed, high processing power, and low energy consumption. These parts can be used in fields such as high-performance computing, artificial intelligence, and autonomous vehicles.

Extreme Durability: Some electronic components are highly resistant to external influences such as physical shock, vibration, and noise. These components can be used in military, industrial, automotive and other environments.

Extreme Efficiency: Some electronic components have high efficiency, which can minimize energy consumption and pack more functionality into a smaller space. These components can be used in mobile devices, solar power systems, and more.

The term Extreme is used to emphasize that an electronic component can perform well under certain extreme conditions or show excellent results within certain limiting factors.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.


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