FET Datasheet(PDF) - PTFB192503FL - Cree, Inc

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FET Datasheet, PDF

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Searched Keyword : 'FET' - Total: 67 (1/4) Pages

Manufacturer	Part #	Datasheet	Description
Cree, Inc	PTFB192503FL	531Kb/14P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 1930 ??1990 MHz
	PTFB182503FL	497Kb/11P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 1805 ??1880 MHz
	PTFB211503FL	578Kb/13P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 2110 ??2170 MHz
	PTFB212503FL	553Kb/13P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 2110 ??2170 MHz
	PTVA030121EA	423Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 ??450 MHz
	PTVA035002EV	462Kb/8P	Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 ??450 MHz
	PTFB091507FH	618Kb/13P	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz
	PTFB193404F	610Kb/14P	Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 ??1990 MHz
	PXFE181507FC	550Kb/8P	Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 ??1880 MHz
	PTVA120252MT	530Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 25 W, 48 V, 500 ??1400 MHz
	PTVA127002EV	1Mb/10P	Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 ??1400 MHz
	PXAC192908FV	525Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz
	PTVA092407NF	595Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 869 ??960 MHz
	PXFC192207FH	662Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 - 1990 MHz
	PTAC210802FC	719Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 1805 ??2170 MHz
	PXAE183708NB	486Kb/6P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 1805 ??1880 MHz
	PTFC262157FH	616Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 ??2690 MHz
	PTVA084007NF	486Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ??805 MHz
	PXAD184218FV	465Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 ??1880 MHz
	PTRA093302FC	482Kb/8P	Thermally-Enhanced High Power RF LDMOS FET 330 W, 50 V, 746 ??768 MHz

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What is FET

FET stands for Field Effect Transistor and is one of the electronic components.

FET is a device that controls the output current according to the magnitude and direction of the input voltage.

FETs use less power and are suitable for high-frequency and high-performance applications.

FETs work by applying an electrical signal to the channel to control its conductivity.

It behaves in a different way than conventional bipolar transistors.

A FET induces a current in the channel by applying a voltage to the semiconductor element forming the channel.

In this way, the FET uses a small amount of power to control the output current.

There are various types of FETs, such as MOSFET (Metal Oxide Semiconductor FET) and JFET (Junction FET).

MOSFETs are the most common type and operate using electrically isolated channels.

A JFET is a structure that uses a pn junction to form a channel, and operates without applying a voltage.

FETs are extensively used in electronic components. The main applications are high-frequency and high-performance applications, integrated circuits, amplifiers, switching circuits, filters, etc.

FETs play a huge role in improving the performance of electronic devices by offering lower power consumption and higher speeds than traditional bipolar transistors.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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