FETS Datasheet(PDF) - PMBF4391 - NXP Semiconductors

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What is FETS

FET stands for Field-Effect Transistor, and it is a type of semiconductor device that is used as a switch or an amplifier in electronic circuits. FETs are three-terminal devices, with a source, a drain, and a gate.

The operation of an FET is based on the control of the flow of charge carriers (electrons or holes) by an electric field, rather than by the injection of charge carriers, as is the case with bipolar transistors.

There are two main types of FETs: the junction FET (JFET) and the metal-oxide-semiconductor FET (MOSFET).

In a JFET, a reverse-biased PN junction is used to create a depletion region that forms a channel between the source and drain terminals. The width of the channel is controlled by the voltage applied to the gate terminal, which modulates the width of the depletion region and hence the conductivity of the channel.

JFETs are typically used in low-noise amplifier circuits, as they have a very low input capacitance and a high input impedance.

In a MOSFET, an oxide layer is used to separate the gate from the channel region.

The oxide layer acts as an insulator, and the gate terminal is used to create an electric field that controls the conductivity of the channel.

MOSFETs are widely used in digital and analog circuits, as they have a high input impedance, a low output impedance, and a fast switching speed.

FETs have a number of advantages over other types of transistors, including a high input impedance, a low power consumption, and a high switching speed.

They are used in a wide range of applications, including in amplifiers, oscillators, switches, and voltage regulators, as well as in digital circuits such as logic gates and memory cells.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	PMBF4391	40Kb/7P	N-channel FETs April 1995
	BSR56	37Kb/6P	N-channel FETs April 1991
	BF908	87Kb/8P	Dual-gate MOS-FETs 1996 Jul 30
	PMBFJ108	36Kb/6P	N-channel junction FETs April 1995
	BF861A	102Kb/12P	N-channel junction FETs 1997 Sep 04
	BF1100	159Kb/14P	Dual-gate MOS-FETs 1995 Apr 25
	PMBFJ111	36Kb/6P	N-channel junction FETs April 1995
	J108	45Kb/7P	N-channel silicon junction FETs 1996 Jul 30
	BF1211	112Kb/15P	N-channel dual-gate MOS-FETs 2003 Dec 16
	BF1109	145Kb/16P	N-channel dual-gate MOS-FETs 1997 Dec 08
	BF909	148Kb/11P	N-channel dual gate MOS-FETs 1995 Apr 25
	BF1101	128Kb/16P	N-channel dual-gate MOS-FETs 1999 May 14
	BF1105	152Kb/16P	N-channel dual-gate MOS-FETs 1997 Dec 02
	BF1107	54Kb/8P	N-channel single gate MOS-FETs 1999 May 14
	BF1212	131Kb/15P	N-channel dual-gate MOS-FETs 2003 Nov 14
	BF904	111Kb/16P	N-channel dual gate MOS-FETs 1999 May 17
	BF904A	114Kb/16P	N-channel dual gate MOS-FETs 1999 May 14
	BF1201	113Kb/16P	N-channel dual-gate PoLo MOS-FETs 2000 Mar 29
	BF1202	116Kb/16P	N-channel dual-gate PoLo MOS-FETs 2000 Mar 29
	BF998	114Kb/12P	Silicon N-channel dual-gate MOS-FETs 1996 Aug 01

FETS Datasheet, PDF

What is FETS

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