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GALLIUM Datasheet, PDF |
Searched Keyword : 'GALLIUM' - Total: 238 (6/12) Pages |
Manufacturer | Part # | Datasheet | Description |
M/A-COM Technology Solu... |
NPT25100 |
1Mb/13P |
Gallium Nitride 28V, 125W RF Power Transistor |
NPTB00050 |
510Kb/8P |
Gallium Nitride 28V, 50W RF Power Transistor | |
Kingbright Corporation |
WP7113YD5V |
310Kb/7P |
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode. |
WP710A10YD5V |
312Kb/7P |
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode. | |
Freescale Semiconductor... |
MRFG35005ANT1 |
452Kb/13P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor |
MRFG35003N6AT1 |
221Kb/11P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor | |
M/A-COM Technology Solu... |
NPT2010 |
2Mb/10P |
Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT |
NPT2018 |
927Kb/5P |
Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT | |
NPT2019 |
918Kb/5P |
Gallium Nitride 48V, 25W, DC-6 GHz HEMT | |
NPT2022 |
2Mb/10P |
Gallium Nitride 48V, 100W, DC-2 GHz HEMT | |
NPTB00004A |
2Mb/10P |
Gallium Nitride 28V, 5W, DC-6 GHz HEMT | |
Kingbright Corporation |
APL3015F3C |
436Kb/4P |
F3 Made with Gallium Arsenide Infrared Emitting diodes. |
Agilent(Hewlett-Packard... |
ATF-13100 |
43Kb/3P |
2-18 GHz Low Noise Gallium Arsenide FET |
ATF-21170 |
47Kb/3P |
0.5-6 GHz Low Noise Gallium Arsenide FET | |
ATF-25170 |
44Kb/3P |
0.5-10 GHz Low Noise Gallium Arsenide FET | |
ATF-25570 |
44Kb/3P |
0.5-10 GHz General Purpose Gallium Arsenide FET | |
ATF-26836 |
47Kb/4P |
2-16 GHz General Purpose Gallium Arsenide FET | |
ATF-45101 |
44Kb/3P |
2-8 GHz Medium Power Gallium Arsenide FET | |
NXP Semiconductors |
MRFG35010AN |
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor Rev. 4, 8/2013 |
Agilent(Hewlett-Packard... |
ATF-45171 |
43Kb/3P |
2-8 GHz Medium Power Gallium Arsenide FET |
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