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HBT Datasheet, PDF

Searched Keyword : 'HBT' - Total: 226 (1/12) Pages
ManufacturerPart #DatasheetDescription
Company Logo Img
Hittite Microwave Corpo...
HMC361G8 Datasheet pdf image
563Kb/6P
SMT GaAs HBT MMIC
HMC323 Datasheet pdf image
154Kb/6P
HBT DRIVER AMPLIFIER DC - 3.0 GHz
HMC631LP3 Datasheet pdf image
284Kb/8P
GaAs HBT VECTOR MODULATOR 1.8 - 2.7 GHz
HMC500LP3 Datasheet pdf image
267Kb/8P
GaAs HBT VECTOR MODULATOR 1.8 - 2.2 GHz
HMC500LP3 Datasheet pdf image
364Kb/8P
GaAs HBT VECTOR MODULATOR 1.8 - 2.2 GHz
HMC630LP3 Datasheet pdf image
283Kb/8P
GaAs HBT VECTOR MODULATOR 700 - 1000 MHz
HMC324MS8G Datasheet pdf image
171Kb/6P
HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz
HMC439QS16G Datasheet pdf image
469Kb/6P
HBT DIGITAL PHASE-FREQUENCY DETECTOR, 10 - 1300 MHz
HMC403S8G Datasheet pdf image
258Kb/8P
HBT DIGITAL PHASE-FREQUENCY DETECTOR, DC - 1.3 GHz
HMC439QS16G Datasheet pdf image
309Kb/6P
HBT DIGITAL PHASE-FREQUENCY DETECTOR, 10 - 1300 MHz
HMC439QS16G Datasheet pdf image
344Kb/6P
HBT DIGITAL PHASE-FREQUENCY DETECTOR, 10 - 1300 MHz
HMC403S8G Datasheet pdf image
182Kb/8P
HBT DIGITAL PHASE-FREQUENCY DETECTOR, DC - 1.3 GHz
HMC364 Datasheet pdf image
192Kb/6P
GaAs HBT MMIC DIVIDE-BY-2, DC - 13 GHz
HMC394LP4 Datasheet pdf image
353Kb/10P
GaAs HBT PROGRAMMABLE 5-BIT COUNTER, DC - 2.2 GHz
HMC580ST89 Datasheet pdf image
272Kb/6P
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz
HMC589ST89 Datasheet pdf image
618Kb/6P
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz
HMC589ST89 Datasheet pdf image
212Kb/6P
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz
HMC394LP4 Datasheet pdf image
457Kb/10P
GaAs HBT PROGRAMMABLE 5-BIT COUNTER, DC - 2.2 GHz
HMC362 Datasheet pdf image
206Kb/6P
GaAs HBT MMIC DIVIDE-BY-4, DC - 11 GHz
HMC414MS8G Datasheet pdf image
322Kb/8P
GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz

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What is HBT


HBT (Heterojunction Bipolar Transistor) is a semiconductor device mainly used in high-frequency electronic devices and circuits. HBT is made using two types of semiconductor materials, surface-type and heterogeneous, which offer the advantages of high-speed operation, high current gain, and high cutoff frequency. These characteristics make HBT widely used in telecommunications and wireless communications fields.

HBTs are suitable for high-frequency and high-speed applications, especially as RF power amplifiers in wireless communication systems. Additionally, higher current gain allows for higher output power. For this reason, HBT is one of the main components used in mobile phones, satellite communications, radar, and other wireless communication devices.

HBTs offer higher performance and efficiency than traditional heterogeneous transistors (BJTs) and are particularly useful in high-frequency and high-speed applications. This is an important element in the communications field, allowing faster data transmission and signal processing.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.


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