HEMT stands for “High Electron Mobility Transistor.” This is a semiconductor device for high-frequency power transmission used in electronics. These transistors are widely used in high-frequency applications, and their high speed and low noise characteristics make them particularly useful in broadband and wireless communications.
The HEMT consists of a gate electrode, a channel, and source/drain electrodes. This transistor was developed to solve various device noise and efficiency issues. Suitable for high-voltage, high-frequency, low-noise applications, especially used in communications technology, satellite communications, radar and various wireless communications fields.
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