HEMT Datasheet(PDF) - CGH40010 - Cree, Inc

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ALL Agilent(Hewlett-Packard)(18)Ampleon Netherlands B.V.(8)Analog Devices(35)AVAGO TECHNOLOGIES LIMITED(24)Broadcom Corporation.(22)Cree, Inc(109)Efficient Power Conversion Corporation.(1)Eudyna Devices Inc(27)

Searched Keyword : 'HEMT' - Total: 109 (1/6) Pages

Manufacturer	Part #	Datasheet	Description
Cree, Inc	CGH40010	948Kb/12P	10 W, RF Power GaN HEMT
	CGH40045	1Mb/12P	45 W, RF Power GaN HEMT
	CGH40006P	1Mb/14P	6 W, RF Power GaN HEMT
	CGH40120P	1Mb/12P	120 W, RF Power GaN HEMT
	CGH40180PP	2Mb/13P	180 W, RF Power GaN HEMT
	CGH40090PP	1Mb/13P	90 W, RF Power GaN HEMT
	CGH40120F	1Mb/13P	120 W, RF Power GaN HEMT
	CGH40010	1Mb/15P	10 W, RF Power GaN HEMT
	CGH40025	1Mb/14P	25 W, RF Power GaN HEMT
	CGH40035F	1Mb/14P	35 W, RF Power GaN HEMT
	CGH40045	1Mb/15P	45 W, RF Power GaN HEMT
	CGHV40200PP	713Kb/13P	200 W, 50 V, GaN HEMT
	CGH40025F	1Mb/12P	25 W, RF Power GaN HEMT
	CGH55030F2	2Mb/10P	25 W, C-band, Unmatched, GaN HEMT
	CGH60008D	528Kb/8P	8 W, 6.0 GHz, GaN HEMT Die
	CGHV1J025D	763Kb/9P	25 W, 18.0 GHz, GaN HEMT Die
	CGH80030D	1Mb/5P	30 W, 8.0 GHz, GaN HEMT Die
	CGH55015F2	1Mb/11P	10 W, C-band, Unmatched, GaN HEMT
	CGH60030D	622Kb/8P	30 W, 6.0 GHz, GaN HEMT Die
	CGH60120D	592Kb/7P	120 W, 6.0 GHz, GaN HEMT Die

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What is HEMT

HEMT is an abbreviation for “High Electron Mobility Transistor”. HEMT is a semiconductor device that can be controlled with a control gate voltage between the source and drain. These devices are particularly useful in high-frequency applications and are used in high-frequency power amplifiers and high-speed logic circuits. HEMTs feature high electron mobility and high current carrying capacity, making them useful for maintaining low transmission circuit losses in high frequency applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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