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HEMT Datasheet, PDF

Searched Keyword : 'HEMT' - Total: 109 (4/6) Pages
ManufacturerPart #DatasheetDescription
Company Logo Img
Cree, Inc
CGH35030F Datasheet pdf image
1Mb/12P
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
CGH27030F Datasheet pdf image
791Kb/8P
30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
CGH55030F1 Datasheet pdf image
914Kb/13P
30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX
CGH27060F Datasheet pdf image
824Kb/8P
60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
CGH27015F Datasheet pdf image
1Mb/8P
15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
CGH35015 Datasheet pdf image
1,011Kb/12P
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
CGH21240F Datasheet pdf image
1Mb/15P
240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX
CGHV59070 Datasheet pdf image
915Kb/10P
70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT
CGH21120F Datasheet pdf image
1Mb/13P
120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX
CGHV27100 Datasheet pdf image
1Mb/11P
100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE
CG2H30070F Datasheet pdf image
1Mb/13P
70 W, 0.5??.0 GHz, 28 V, RF Power GaN HEMT
CGH25120F Datasheet pdf image
1Mb/12P
120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE
CMPA0060002D Datasheet pdf image
417Kb/7P
2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier
CGH09120F Datasheet pdf image
1Mb/13P
120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM
CGHV14500 Datasheet pdf image
1Mb/11P
500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
CGHV96050F2 Datasheet pdf image
1Mb/13P
50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
CGHV14250 Datasheet pdf image
1Mb/11P
250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
CGH35060F1 Datasheet pdf image
2Mb/12P
60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access
CGHV35150 Datasheet pdf image
853Kb/10P
150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems
CGH27030F Datasheet pdf image
1Mb/12P
30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz

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What is HEMT


HEMT is an abbreviation for “High Electron Mobility Transistor”. HEMT is a semiconductor device that can be controlled with a control gate voltage between the source and drain. These devices are particularly useful in high-frequency applications and are used in high-frequency power amplifiers and high-speed logic circuits. HEMTs feature high electron mobility and high current carrying capacity, making them useful for maintaining low transmission circuit losses in high frequency applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.


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