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IGBT Datasheet, PDF

Searched Keyword : 'IGBT' - Total: 58 (1/3) Pages
ManufacturerPart #DatasheetDescription
Company Logo Img
Intersil Corporation
HGTG20N120E2 Datasheet pdf image
167Kb/5P
34A, 1200V N-Channel IGBT
April 1995
HGTG24N60D1 Datasheet pdf image
32Kb/4P
24A, 600V N-Channel IGBT
May 1995
HGTG34N100E2 Datasheet pdf image
38Kb/5P
34A, 1000V N-Channel IGBT
April 1995
HGTP12N60D1 Datasheet pdf image
31Kb/4P
12A, 600V N-Channel IGBT
April 1995
HGTG20N100D2 Datasheet pdf image
36Kb/5P
20A, 1000V N-Channel IGBT
May 1995
HGTA32N60E2 Datasheet pdf image
31Kb/4P
32A, 600V N-Channel IGBT
April 1995
HGTG30N120D2 Datasheet pdf image
40Kb/5P
30A, 1200V N-Channel IGBT
April 1995
HGTG32N60E2 Datasheet pdf image
33Kb/4P
32A, 600V N-Channel IGBT
April 1995
HGTG30N60A4 Datasheet pdf image
92Kb/8P
600V, SMPS Series N-Channel IGBT
January 2000
HGTD3N60A4S Datasheet pdf image
156Kb/10P
600V, SMPS Series N-Channel IGBT
January 2000
HGTD7N60A4S Datasheet pdf image
168Kb/11P
600V, SMPS Series N-Channel IGBT
June 2000
HGTG40N60A4 Datasheet pdf image
93Kb/8P
600V, SMPS Series N-Channel IGBT
April 2000
HGTP12N60A4 Datasheet pdf image
115Kb/10P
600V, SMPS Series N-Channel IGBT
May 1999
HGTD1N120BNS Datasheet pdf image
71Kb/7P
5.3A, 1200V, NPT Series N-Channel IGBT
January 2000
HGTG11N120CN Datasheet pdf image
81Kb/7P
43A, 1200V, NPT Series N-Channel IGBT
January 2000
HGTG20N120CN Datasheet pdf image
83Kb/7P
63A, 1200V, NPT Series N-Channel IGBT
January 2000
HGTP5N120CN Datasheet pdf image
80Kb/7P
25A, 1200V, NPT Series N-Channel IGBT
January 2000
HGTG18N120BN Datasheet pdf image
84Kb/7P
54A, 1200V, NPT Series N-Channel IGBT
January 2000
HGTG30N60B3 Datasheet pdf image
105Kb/7P
60A, 600V, UFS Series N-Channel IGBT
January 2000
HGTG40N60C3 Datasheet pdf image
79Kb/7P
75A, 600V, UFS Series N-Channel IGBT
January 2000

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What is IGBT


An Insulated-Gate Bipolar Transistor (IGBT) is a type of power semiconductor device used for controlling high-voltage, high-current applications, such as in power supplies, motor drives, and inverters. It combines the fast switching speed of a bipolar junction transistor (BJT) with the voltage-controlled gate of a metal-oxide-semiconductor field-effect transistor (MOSFET).

The IGBT works by using a MOSFET as the input stage and a bipolar junction transistor as the output stage.

The gate of the MOSFET is isolated from the rest of the device, which allows for high-voltage operation and improved reliability.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.


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