| Manufacturer | Part No. | Datasheet | Description |
Siemens Semiconductor G...
|
BAT64-07 |
88Kb / 4P |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
| CGY92 |
159Kb / 14P |
GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier) |
| BF1012 |
33Kb / 4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
| CGY180 |
278Kb / 15P |
GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V) |
| SRD00212Z |
64Kb / 3P |
Ternary PIN Photodiode in TO-Package with Integrated Optics |
| CMY91 |
58Kb / 9P |
GaAs MMIC (GaAs mixer with integrated IF-amplifier for mobile communication) |
| BF1005S |
52Kb / 4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
| BAT64-07W |
34Kb / 3P |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
| BAT64 |
91Kb / 3P |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
| BF1012S |
43Kb / 4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
| SRD00512Z |
75Kb / 4P |
Ge-Avalanche Photodiode in TO Package with Integrated Optics |
| CGY94 |
122Kb / 9P |
GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V) |
| 3SB3400-1QC |
82Kb / 4P |
ACTUATOR-/INDICATOR COMPONENT WITH INTEGRATED LED 110V AC LAMP HOLDER SCREW TERMINAL GREEN |
| CGY181 |
138Kb / 14P |
GaAs MMIC (Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier) |
| BF1009S |
51Kb / 4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
| BF997 |
115Kb / 7P |
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
| BAT64-W |
69Kb / 6P |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
| PMB2200 |
79Kb / 3P |
integrated modulator-mixer for transmit path |
| BF1005 |
51Kb / 4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
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