JUNCTION Datasheet(PDF) - 3000GXHH32 - Toshiba Semiconductor

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JUNCTION Datasheet, PDF

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Searched Keyword : 'JUNCTION' - Total: 108 (2/6) Pages

Manufacturer	Part #	Datasheet	Description
Toshiba Semiconductor	3000GXHH32	245Kb/6P	Fast Recovery Diode (FRD) Silicon Diffused Junction 2022-04-21 Rev.2.0
	2SK3376MFV	152Kb/6P	Silicon N Channel Junction Type For ECM
	2SK3376TV	151Kb/6P	Silicon N Channel Junction Type For ECM
	U5ZA27C	135Kb/4P	TOSHIBA ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE
	CRH01B	312Kb/7P	High-Efficiency Diode (HED) Silicon Diffused Junction 2022-08-05 Rev.1.0
	2SK4059TK	147Kb/5P	Silicon N Channel Junction Type For ECM
	2SK4059TV	147Kb/5P	Silicon N Channel Junction Type For ECM
	2SK3582TV	141Kb/5P	Silicon N Channel Junction Type For ECM
	CRH02B	303Kb/7P	High-Efficiency Diode (HED) Silicon Diffused Junction 2022-11-02 Rev.1.0
	2SK881	648Kb/6P	Silicon N Channel Junction Type FM Tuner Applications
	2SJ106	190Kb/3P	P CHANNEL JUNCTION TYPE (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)
	2SJ144	190Kb/3P	P CHANNEL JUNCTION TYPE (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)
	2SK210	717Kb/6P	Silicon N Channel Junction Type FM Tuner Applications
	2SK211	714Kb/6P	Silicon N Channel Junction Type FM Tuner Applications
	3DL41A	140Kb/2P	EPITAXIAL JUNCTION TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS)
	2SJ74	213Kb/5P	P CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
	2SK184-GRTPE4	295Kb/4P	TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
	2SK210-Y	329Kb/6P	TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
	2SK3320-GR	312Kb/5P	TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
	U1DL49	122Kb/3P	TOSHIBA HIGH EFFICIENCY RECTIFIER (HED) SILICON EPITAXIAL JUNCTION TYPE

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What is JUNCTION

Junction in electronic components means P-N junction.

P-N junctions are used in various electronic components and are one of the important components of semiconductor devices.

A P-N junction is made by connecting a P-type semiconductor and an N-type semiconductor. At this time, a PN junction is formed as electrons and holes combine near the junction of the P-type semiconductor and the N-type semiconductor.

In this process, the flow of charge is hindered near the P-N junction to form a region where no current flows, and various electronic components are constructed using this area.

P-N junctions play an important role in semiconductor devices.

It is used in various devices such as diodes and transistors, and is used for conversion, control, and processing of electrical signals in electronic components.

In addition, P-N junctions are also used in solar cells, which play an important role in converting solar energy into electrical energy.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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