| Electronic Manufacturer | Part Number | Datasheet | Electronics Description |
Siemens Semiconductor G...
|
CGY98 |
44Kb / 5P |
GaAs MMIC (Broadband Power Amplifier [ 800..2000 Mhz ] GSM,AMPS or PCN Operating voltage range: 2.7 to 5.0 V) |
| BAR64-W |
48Kb / 4P |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
| BAR64-02W |
25Kb / 4P |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
| BF799 |
40Kb / 3P |
NPN SILICON RF TRANSISTOR (For linear broadband amplifier applications up to 500 MHz SAW filter driver in TV tuners) |
| BAR64 |
89Kb / 4P |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
| BAR64-07 |
43Kb / 3P |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
| CGY196 |
192Kb / 15P |
GaAs MMIC (Broadband Power Amplifier [ 800..3500 Mhz ] DECT,PHS,PCS,GSM,AMPS,WLAN,WLL Single Voltage Supply) |
| BF554 |
60Kb / 4P |
NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits) |
| BAT18- |
39Kb / 2P |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
| CGY40 |
30Kb / 5P |
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Application range: 100 MHz to 3 GHz) |
| SDA2120 |
295Kb / 13P |
120 MHz PLL for AM/FM Receivers |
| BF550 |
92Kb / 5P |
PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners) |
| CLY10 |
73Kb / 7P |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
| CLY5 |
86Kb / 8P |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
| CLY15 |
59Kb / 7P |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
| BAR60 |
77Kb / 4P |
Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) |
| BF543 |
97Kb / 5P |
Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) |
| BF999 |
116Kb / 5P |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
| BF987 |
79Kb / 5P |
SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) |
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