Electronic Manufacturer | Part Number | Datasheet | Electronics Description |

Infineon Technologies A...
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PTF180101S |
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LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz |
PTF180101 |
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LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz |
PTF180601 |
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LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz |
PTFA210451E |
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Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz |
PTF141501E |
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Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450-1500 MHz, 1600-1700 MHz |
PXAC201602FC |
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Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz |
PTFA072401EL |
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Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz |
PTVA120252MT |
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Thermally-Enhanced High Power RF LDMOS FET 25 W, 48 V, 500 – 1400 MHz |
PTVA102001EA |
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Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz |
TLF50211EL |
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2.2 MHz Step-Down Regulator 500 mA, 5 V Low quiescent current |
PTFA181001E |
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Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz |
PTF191601F |
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Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz |
PTFA220121M |
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High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz |
PTF041501E |
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Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz |
PXAC241702FC |
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Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 – 2400 MHz |
BGA713L7 |
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Single-Band UMTS LNA (700, 800 MHz) |
TLF50201ELV50 |
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2.2 MHz Step-Down Regulator 500 mA, 5 V, low quiescent current |
PTFA070601E |
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Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 – 770 MHz |
PXAC243502FV_16 |
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High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz |
TDK5101 |
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ASK/FSK Transmitter 315 MHz |