| Manufacturer | Part No. | Datasheet | Description |
Infineon Technologies A...
|
PTF180101S |
209Kb / 10P |
LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz |
| PTF180101 |
310Kb / 10P |
LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz |
| PTFA210451E |
263Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz |
| PTF180601 |
233Kb / 11P |
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz |
| PTF141501E |
292Kb / 12P |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450-1500 MHz, 1600-1700 MHz |
| PTFB211501E |
362Kb / 13P |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz |
| PTFB192503EL |
673Kb / 15P |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930-1990 MHz |
| PTF140451E |
106Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 - 1550 MHz |
| TDK5111F |
893Kb / 36P |
315 MHz ASK/FSK Transmitter in 10-pin Package |
| TDK5111 |
588Kb / 39P |
ASK/FSK Transmitter 315 MHz |
| PTF210101M |
276Kb / 8P |
High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz |
| PTFA261702E |
372Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 - 2700 MHz |
| PTFA180701E |
368Kb / 11P |
Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz |
| PTFB183404E |
727Kb / 18P |
High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz |
| BGA736L16 |
1Mb / 45P |
Tri-Band HSDPA LNA (2100, 1900/2100, 800/900 MHz) |
| PTFA191001E |
256Kb / 11P |
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz |
| PTFB193404F |
244Kb / 14P |
Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930-1990 MHz |
| TLF50251EL |
1Mb / 30P |
2.2 MHz Step-Down Regulator 500 mA, 5 V, low quiescent current |
| BGA713L7 |
1Mb / 27P |
Single-Band UMTS LNA (700, 800 MHz) |
| PTFA241301E |
248Kb / 12P |
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz |
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