MHZ Datasheet(PDF) - PXAC201602FC

Cree, Inc

PXAC201602FC

529Kb / 9P

Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 - 1920 MHz, 2010 - 2025 MHz

CMPA0060002F

961Kb / 9P

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

CMPA0060002D

417Kb / 7P

2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier

CMPA5259050F

909Kb / 11P

50 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers

PTFC270051M

745Kb / 14P

High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz

CGHV27060MP

1Mb / 8P

60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications

PTFB213208FV

659Kb / 13P

Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 - 2170 MHz

PTMA210152M

1Mb / 15P

Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 – 2200 MHz

PTMA080152

814Kb / 11P

Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz

CGH55015F1

1Mb / 13P

15 W, 5500-5800 MHz, GaN HEMT for WiMAX

CGHV31500F

722Kb / 10P

500 W, 2700 - 3100 MHz, 50-Ohm Input

PTFB182503FL

497Kb / 11P

Thermally-Enhanced High Power RF LDMOS FET 240 W, 1805 – 1880 MHz

PTVA043502EC

489Kb / 11P

Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 - 860 MHz

PTFB210801FA

636Kb / 11P

Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz

PTFB213004F

528Kb / 16P

High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz

GTVA262701FA

489Kb / 8P

Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz

GTVA262711FA

464Kb / 9P

Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 – 2690 MHz

PTVA030121EA

423Kb / 10P

Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz

CGH35015F

773Kb / 9P

15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX

PTVA120121M

530Kb / 8P

Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 500 – 1400 MHz

MHZ Datasheet, PDF

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Electronic Manufacturer	Part Number	Datasheet	Electronics Description
Cree, Inc	PXAC201602FC	529Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 - 1920 MHz, 2010 - 2025 MHz
	CMPA0060002F	961Kb / 9P	2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier
	CMPA0060002D	417Kb / 7P	2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier
	CMPA5259050F	909Kb / 11P	50 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers
	PTFC270051M	745Kb / 14P	High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz
	CGHV27060MP	1Mb / 8P	60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications
	PTFB213208FV	659Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 - 2170 MHz
	PTMA210152M	1Mb / 15P	Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 – 2200 MHz
	PTMA080152	814Kb / 11P	Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz
	CGH55015F1	1Mb / 13P	15 W, 5500-5800 MHz, GaN HEMT for WiMAX
	CGHV31500F	722Kb / 10P	500 W, 2700 - 3100 MHz, 50-Ohm Input
	PTFB182503FL	497Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 1805 – 1880 MHz
	PTVA043502EC	489Kb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 - 860 MHz
	PTFB210801FA	636Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz
	PTFB213004F	528Kb / 16P	High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
	GTVA262701FA	489Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz
	GTVA262711FA	464Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 – 2690 MHz
	PTVA030121EA	423Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz
	CGH35015F	773Kb / 9P	15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
	PTVA120121M	530Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 500 – 1400 MHz