| Electronic Manufacturer | Part Number | Datasheet | Electronics Description |
Cree, Inc
|
PXAC201602FC |
 |
Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 - 1920 MHz, 2010 - 2025 MHz |
| CMPA0060002F |
|
2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier |
| CMPA0060002D |
|
2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier |
| CGHV14800 |
|
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems |
| CGH21240F |
|
240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX |
| PTFC210202FC |
|
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz |
| PXAC210552FC |
|
Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz |
| CMPA5259025F |
|
25 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers |
| PTRA097008NB |
|
Thermally-Enhanced High Power RF LDMOS FET 630 W, 48 V, 920 – 960 MHz |
| CGH27030F |
|
30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX |
| PTMA080152M |
|
Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz |
| CGHV22200 |
|
200 W, 1800-2200 MHz, GaN HEMT for LTE |
| PTFA220121M |
|
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz |
| CGH35030F |
|
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX |
| CGHV35060MP |
|
60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations |
| PXAC260602FC |
|
Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB 28 V, 2620 – 2690 MHz |
| PTFB193404F |
|
Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 – 1990 MHz |
| PTFC262157FH |
|
Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz |
| PTMA210152M |
|
Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 – 2200 MHz |
| PXAC182002FC |
|
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz |
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