Electronic Manufacturer | Part Number | Datasheet | Electronics Description |

Cree, Inc
|
PXAC201602FC |
 |
Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 - 1920 MHz, 2010 - 2025 MHz |
CMPA0060002F |
 |
2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier |
CMPA0060002D |
 |
2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier |
CGHV14800 |
 |
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems |
CGH21240F |
 |
240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX |
PTFC210202FC |
 |
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz |
PXAC210552FC |
 |
Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz |
CMPA5259025F |
 |
25 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers |
PTRA097008NB |
 |
Thermally-Enhanced High Power RF LDMOS FET 630 W, 48 V, 920 – 960 MHz |
CGH27030F |
 |
30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX |
PTMA080152M |
 |
Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz |
CGHV22200 |
 |
200 W, 1800-2200 MHz, GaN HEMT for LTE |
PTFA220121M |
 |
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz |
CGH35030F |
 |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX |
CGHV35060MP |
 |
60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations |
PXAC260602FC |
 |
Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB 28 V, 2620 – 2690 MHz |
PTFB193404F |
 |
Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 – 1990 MHz |
PTFC262157FH |
 |
Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz |
PTMA210152M |
 |
Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 – 2200 MHz |
PXAC182002FC |
 |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz |