| Manufacturer | Part # | Datasheet | Description |
Infineon Technologies A...
|
IRF6648PBF |
560Kb/10P |
Application Specific MOSFETs
2017-04-06 |
| Z8F80216033 |
1,011Kb/22P |
for Infineon?셲 Automotive MOSFETs
1.1 November 29, 2021 |
| TDA21201 |
754Kb/15P |
Integrated Switch(MOSFET Driver and MOSFETs)
Apr-29, 2002 |
| TDA21106 |
200Kb/7P |
High speed Driver with bootstrapping for dual Power MOSFETs
Rev 2.0 Apr, 2004 |
| TDA21102 |
197Kb/7P |
High speed Driver with bootstrapping for dual Power MOSFETs
Rev. 1.0 Dec 19, 2003 |
| TDA21107 |
304Kb/12P |
High speed Driver with bootstrapping for dual Power MOSFETs
Version 1.2, Aug 2004 |
| TDA21101 |
47Kb/5P |
High speed Driver with bootstrapping for dual Power MOSFETs
2002-03-28 |
| TDA21102 |
250Kb/8P |
High speed Driver with bootstrapping for dual Power MOSFETs
Rev. 2.0 Aug 31, 2004 |
| IRF9389PBF |
249Kb/14P |
High and low-side MOSFETs in a single package
January 14 2013 |
| 1EDN71X6G |
12Mb/38P |
200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs
Rev. 2.1 2021-10-12 |
| 1EDN71X6U |
1Mb/34P |
200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs
Rev. 2.0, 2022-07-29 |
| IPB60R060C7 |
1Mb/15P |
CoolMOS??C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
Rev.2.0,2015-11-30 |
| IPB60R120C7 |
1Mb/15P |
CoolMOS??C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
Rev.2.0,2015-11-30 |
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