Manufacturer | Part # | Datasheet | Description |
Toshiba Semiconductor
|
TC74VHC03F |
254Kb/6P |
QUAD 2 -INPUT NAND GATE(OPER DRAIN) |
TC74VHC03F |
245Kb/8P |
Quad 2-Input NAND Gate (open drain) |
TC58256FTI |
1Mb/33P |
256-MBIT (32M x 8BITS) CMOS NAND EEPROM |
TH58BYG3S0HBAI4 |
2Mb/54P |
8 GBIT (1G × 8 BIT) CMOS NAND E2PROM 2018-06-01C |
TX58TEGXDCJTAX0 |
252Kb/14P |
TOSHIBA NAND memory Toggle DDR1.0 Technical Data Sheet Rev. 0.3 2012 - 04 - 10 |
TC5832DC |
1Mb/38P |
32 MBIT (4M x 8BIT) CMOS NAND E2PROM |
TH58BVG3S0HBAI4 |
2Mb/54P |
8 GBIT (1G × 8 BIT) CMOS NAND E2PROM 2018-06-01C |
TC58256FT |
1Mb/33P |
256-MBIT (32M x 8BITS) CMOS NAND EEPROM |
TC58TEG5DCJTAX0 |
784Kb/81P |
TOSHIBA NAND memory Toggle DDR1.0 Technical Data Sheet Rev. 0.2 2012 - 03 - 01 |
TH58BVG3S0HBAI6 |
2Mb/54P |
8 GBIT (1G × 8 BIT) CMOS NAND E2PROM 2018-06-01C |
TH58BVG3S0HTAI0 |
2Mb/54P |
8 GBIT (1G × 8 BIT) CMOS NAND E2PROM 2018-06-01C |
TC58256AFT |
345Kb/33P |
256-MBIT (32M X 8 BITS) CMOS NAND E2PROM |
TC5832FT |
1Mb/38P |
32 MBIT (4M X 8 BITS) CMOS NAND E2PROM |
TH58NVG5S0FTA20 |
677Kb/73P |
32 GBIT (4G 횞 8 BIT) CMOS NAND E2PROM |
TC581282AXB |
507Kb/31P |
128-MBIT (16M X 8 BITS) CMOS NAND E2PROM |
TC58NVG1S3ETA00 |
497Kb/65P |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM |
TC58NYG2S3ETA00 |
504Kb/70P |
4 GBIT (512M × 8 BIT) CMOS NAND E2 PROM 2010-07-13C |
TC58NVG4S2FTA00 |
608Kb/72P |
16 GBIT (2G × 8 BIT) CMOS NAND E2 PROM 2009-10-02C |
TC58DVG3S0ETA00 |
621Kb/73P |
8 GBIT (1G × 8 BIT) CMOS NAND E2 PROM 2009-03-09C |
TC58BVG2S0HBAI6 |
2Mb/53P |
4 GBIT (512M × 8 BIT) CMOS NAND E2 PROM 2018-06-01C |