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RDS Datasheet, PDF

Search Description : 'RDS' - Total: 1350 (1/68) Pages
Electronic ManufacturerPart NumberDatasheetElectronics Description

SeCoS Halbleitertechnol...
SST3585_12 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
SDN520C N-Ch: 4.5 A, 20 V, RDS(ON) 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m N & P-Channel Enhancement Mode MOSFET
STT3585_12 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
STT6602 N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET
SSG4502CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
SSG4512CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m
SSG4520H_12 N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET

International Rectifier
IRFB9N30A Power MOSFET(Vdss=300V, Rds(on)=0.45ohm, Id=9.3A)

Motorola, Inc
MTP2P50E TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM

SamHop Microelectronics...
STS3409 Super high dense cell design for low RDS(ON).

International Rectifier
IRF620SPBF HEXFET POWER MOSFET (VDSS=200V , RDS(on)=0.80Ω , ID=5.2A )
IRFL210 Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.96A)
IRF3205 Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A⑤)

SamHop Microelectronics...
STUD438S Super high dense cell design for low RDS(ON).

Sensitron
SHD219720 LOW RDS HERMETIC POWER MOSFET - P-CHANNEL

International Rectifier
IRFR1111 Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=33A⑤)
IRF5Y3205CM POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.022ohm, Id=18A*)

Kersemi Electronic Co.,...
KSM8N60 Advanced high cell denity trench technology for ultra RDS

Advanced Monolithic Sys...
AMS3401M23RG Super high density cell design for Extremely low RDS(ON)

International Rectifier
IRFZ48R Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=50*A)

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